Art

J-GLOBAL ID：201102243694473334   Reference number：11A1514331

Growth mechanism of ZnO low-temperature homoepitaxy

ZnO低温ホモエピタキシーの成長機構

Author (7)： PARK S. H. (Center for Interdisciplinary Res., Tohoku Univ., Aoba 6-3, Aramaki, Aobak-ku, Sendai 980-8578, JPN) ,  MINEGISHI T. (Center for Interdisciplinary Res., Tohoku Univ., Aoba 6-3, Aramaki, Aobak-ku, Sendai 980-8578, JPN) ,  LEE H. J. (Center for Interdisciplinary Res., Tohoku Univ., Aoba 6-3, Aramaki, Aobak-ku, Sendai 980-8578, JPN) ,  OH D. C. (Center for Optoelectronic Materials and Devices, Dep. of Defense Sci. and Technol., Hoseo Univ., 165 Sechul-ri ...) ,  KO H. J. (Photonics Device Team, Korea Photonics Technol. Inst., 971-35 Wolchul-dong, Buk-gu, Gwangju, 500-779, KOR) ,  CHANG J. H. (Center for Interdisciplinary Res., Tohoku Univ., Aoba 6-3, Aramaki, Aobak-ku, Sendai 980-8578, JPN) ,  YAO T. (Center for Interdisciplinary Res., Tohoku Univ., Aoba 6-3, Aramaki, Aobak-ku, Sendai 980-8578, JPN)
Material： Journal of Applied Physics  (Journal of General Physics and its Application to Other Sciences and to Industry)
Volume： 110  Issue： 5  Page： 053520  Publication year： Sep. 01, 2011 
JST Material Number： C0266A  ISSN： 0021-8979  CODEN： JAPIAU  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： *zinc oxide ,  low temperature ,  *homoepitaxy ,  *mechanism ,  *semiconductor thin film ,  MBE growth ,  substrate (plate) ,  buffer layer ,  surface roughness ,  rocking curve ,  FWHM ,  self-trapped exciton ,  donor ,  spectral linewidth ,  carrier mobility ,  dislocation(crystal) ,  scattering ,  ionization ,  carrier scattering ,  interface (surface) ,  surface ,  point defect ,  Diffusion ,  high quality ,  electron mobility ,  impurity scattering ,  lattice defect
Semi thesaurus term： wetting layer

JST classification (1)： Oxide thin films  (BK14050P)

Terms in the title (4)： ZnO ,  低温 ,  ホモエピタキシー ,  成長