Art
J-GLOBAL ID:201102263597969296   Reference number:11A0637856

Preparation of ferroelectric field effect transistor based on sustainable strongly correlated (Fe,Zn)3O4 oxide semiconductor and their electrical transport properties

持続可能な強相関(Fe,Zn)3O4酸化物半導体ベース強誘電電界効果トランジスタの作製とその電気輸送特性
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Volume: 98  Issue: 10  Page: 102506  Publication year: Mar. 07, 2011 
JST Material Number: H0613A  ISSN: 0003-6951  CODEN: APPLAB  Document type: Article
Article type: 短報  Country of issue: United States (USA)  Language: ENGLISH (EN)
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Category name(code) classified by JST.
Transistors 

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