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J-GLOBAL ID:201102276561433491   Reference number:11A1814535

Fixed nitrogen atoms in the SiO2/SiC interface region and their direct relationship to interface trap density

SiO2/SiC界面領域における固定窒素原子と界面トラップ密度との直接的な関係
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Volume: 99  Issue: 18  Page: 182111  Publication year: Oct. 31, 2011 
JST Material Number: H0613A  ISSN: 0003-6951  CODEN: APPLAB  Document type: Article
Article type: 短報  Country of issue: United States (USA)  Language: ENGLISH (EN)
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Metal-insulator-semiconductor structures 
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