Rchr
J-GLOBAL ID：200901029091248421
Update date: Oct. 02, 2022
Kosugi Ryouji
コスギ リョウジ | Kosugi Ryouji
Affiliation and department：
National Institute of Advanced Industrial Science and Technology
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Homepage URL (1)：
http://www.aist.go.jp/RESEARCHERDB/cgi-bin/worker_detail.cgi?call=namae&rw_id=R31126214
MISC (19)：
Diluted nitric oxide (NO) annealing of SiO2/4H-SiC in cold-wall oxidation furnace. Materials Science Forum. 2004. 457-460. 1345-1348
Fabrication of double implanted (0001) 4H-SiC MOSFETs by using pyrogenic re-oxidation annealing. Materials Science Forum. 2004. 457-460,1397-1400
R Kosugi, K Fukuda, K Arai. Thermal oxidation of (0001) 4H-SiC at high temperatures in ozone-admixed oxygen gas ambient. APPLIED PHYSICS LETTERS. 2003. 83. 5. 884-886
Reduction of Interface Trapped Density of SiO2/4H-SiC by Oxidation of Atomic Oxygen. MATERIALS SCIENCE FORUM. 2003. 433. 563-566
MN Khan, S Nishizawa, T Kato, R Kosugi, K Arai. Silicon carbide epitaxial layer growths on Acheson seed crystals from silicon melt. MATERIALS LETTERS. 2002. 57. 2. 307-314
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