Art

J-GLOBAL ID：201202230346497567   Reference number：12A0777791

IR study of fundamental chemical reactions in atomic layer deposition of HfO₂ with tetrakis(ethylmethylamino)hafnium (TEMAH), ozone, and water vapor

テトラキス(エチルメチルアミノ)ハフニウム(TEMAH),オゾン,及び水蒸気によるHfO₂の原子層堆積における基本化学反応のIR研究

Author (8)： HIROSE F. (Graduate school of Sci. and Engineering, Yamagata Univ. 4-3-16 Joonan, Yonezawa 992-8510, JPN) ,  KINOSHITA Y. (Graduate school of Sci. and Engineering, Yamagata Univ. 4-3-16 Joonan, Yonezawa 992-8510, JPN) ,  KANOMATA K. (Graduate school of Sci. and Engineering, Yamagata Univ. 4-3-16 Joonan, Yonezawa 992-8510, JPN) ,  MOMIYAMA K. (Graduate school of Sci. and Engineering, Yamagata Univ. 4-3-16 Joonan, Yonezawa 992-8510, JPN) ,  KUBOTA S. (Graduate school of Sci. and Engineering, Yamagata Univ. 4-3-16 Joonan, Yonezawa 992-8510, JPN) ,  HIRAHARA K. (Graduate school of Sci. and Engineering, Yamagata Univ. 4-3-16 Joonan, Yonezawa 992-8510, JPN) ,  KIMURA Y. (RIEC, Tohoku Univ., 2-1-1 Katahira, Sendai 980-8577, JPN) ,  NIWANO M. (RIEC, Tohoku Univ., 2-1-1 Katahira, Sendai 980-8577, JPN)
Material： Applied Surface Science  (Appl Surf Sci)
Volume： 258  Issue： 19  Page： 7726-7731  Publication year： Jul. 15, 2012 
JST Material Number： B0707B  ISSN： 0169-4332  Document type： Article
Article type： 原著論文  Country of issue： Netherlands (NLD)  Language： ENGLISH (EN)

Thesaurus term： *hafnium oxide ,  dielectric thin film ,  *chemical vapor deposition ,  precursor (substance) ,  *water vapor ,  infrared absorption spectrum ,  binding site ,  *hafnium complex ,  organohafnium compound ,  MOCVD ,  *Ozone ,  wafer ,  Adsorption ,  *surface reaction ,  high-k dielectrics ,  Si wafer
Semi thesaurus term： absorption site ,  *ALD ,  silicon substrate

JST classification (2)： Oxide thin films  (BK14050P) ,  Other noncatalytic reactions  (CB06070U)

Substance index (1)： Methylethylamine

Terms in the title (9)： テトラ ,  ハフニウム ,  オゾン ,  水蒸気 ,  HfO2 ,  原子層堆積 ,  化学反応 ,  Ir ,  研究