Art

J-GLOBAL ID：201202282994452862   Reference number：12A0153165

4H-SiC Lateral RESURF MOSFETs on Carbon-face Substrates

炭素面基板上の4H-SiC横RESURF MOSFET

Author (5)： OKAMOTO Mitsuo (Advanced Industrial Sci. and Technol., Ibaraki, JPN) ,  SUZUKI Seiji (Ultra-low-loss Power Device Technol. Res. Body, Ibaraki, JPN) ,  KATO Makoto (Advanced Industrial Sci. and Technol., Ibaraki, JPN) ,  YATSUO Tsutomu (Advanced Industrial Sci. and Technol., Ibaraki, JPN) ,  FUKUDA Kenji (Advanced Industrial Sci. and Technol., Ibaraki, JPN)
Material： Materials Science Forum  (Mater Sci Forum)
Volume： 483/485  Page： 805-808  Publication year： 2005 
JST Material Number： D0716B  ISSN： 0255-5476  Document type： Article
Country of issue： Switzerland (CHE)  Language： ENGLISH (EN)

Terms in the title (4)： 炭素 ,  4H-SiC ,  RESURF ,  MOSFET