Rchr
J-GLOBAL ID：200901099482241837
Update date: May. 16, 2020
Okamoto Mitsuo
オカモト ミツオ | Okamoto Mitsuo
Affiliation and department：
National Institute of Advanced Industrial Science and Technology
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Homepage URL (1)：
http://www.aist.go.jp/RESEARCHERDB/cgi-bin/worker_detail.cgi?call=namae&rw_id=M20162061
MISC (7)：
Yasunori Tanaka, Mitsuo Okamoto, Akio Takatsuka, Kazuo Arai, Tsutomu Yatsuo, Koji Yano, Masanobu Kasuga. 700-V 1.0-m Omega center dot cm(2) buried gate SiC-SIT (SiC-BGSIT). IEEE ELECTRON DEVICE LETTERS. 2006. 27. 11. 908-910
4H-SiC Lateral RESURF MOSFETs on Carbon-face Substrates. MATERIALS SCIENCE FORUM. 2005. 438-485. 805-808
Analysis of Low On-Resistance in 4H-SiC Double-Epitaxial MOSFET. MATERIALS SCIENCE FORUM. 2005. 483-485. 813-816
S Harada, M Okamoto, T Yatsuo, K Adachi, K Fukuda, K Arai. 8.5-m Omega center dot cm(2) 600-V double-epitaxial MOSFETs in 4H-SiC. IEEE ELECTRON DEVICE LETTERS. 2004. 25. 5. 292-294
Fabrication of 4H-SiC Double-Epitaxial MOSFETs. Materials Science Forum. 2004. 457-460. 1421-1424
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