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J-GLOBAL ID:201202293302257960   Reference number:12A0495339

Experimental Study of Silicon Monolayers for Future Extremely Thin Silicon-on-Insulator Devices: Phonon/Band Structures Modulation Due to Quantum Confinement Effects

将来の非常に薄いシリコン-オン-インシュレータデバイスのためのシリコン単分子層の実証研究:量子閉じ込め効果によるフォノン/バンド構造変調
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Material:
Volume: 51  Issue: 2,Issue 2  Page: 02BC03.1-02BC03.8  Publication year: Feb. 25, 2012 
JST Material Number: G0520B  ISSN: 0021-4922  CODEN: JJAPB6  Document type: Article
Article type: 原著論文  Country of issue: United Kingdom (GBR)  Language: ENGLISH (EN)
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Thesaurus term/Semi thesaurus term
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All keywords is available on JDreamIII(charged).
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JST classification (2):
JST classification
Category name(code) classified by JST.
Transistors  ,  Luminescence of semiconductors 
Reference (28):
  • 1) M. Yoshimi, M. Takahashi, S. Kambayashi, M. Kemmochi, H. Hazama, T. Wada, K. Kato, H. Tango, and K. Natori: IEICE Trans. Electron. E74-C (1991) 337.
  • 2) A. Nazarov, J.-P. Colinge, F. Balestra, J.-P. Raskin, F. Gamiz, and V. S. Lysenko: Semiconductor-on-Insulator Materials for Nanoelectronics Applications (Springer, Berlin, 2011).
  • 3) K. Uchida, H. Watanabe, A. Kinoshita, J. Koga, T. Numata, and S. Takagi: IEDM Tech. Dig., 2002, p. 47.
  • 4) G. Tsutsui, M. Saitoh, and T. Hiramoto: IEEE Trans. Electron Devices 26 (2005) 836.
  • 5) B. K. Agrawal and S. Agrawal: Appl. Phys. Lett. 77 (2000) 3039.
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