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J-GLOBAL ID：201301021239292206   Update date: Aug. 31, 2024

Makimoto Toshiki

マキモト トシキ | Makimoto Toshiki
Affiliation and department：
Waseda University Faculty of Science and Engineering School of Advanced Science and Engineering

About Waseda University Faculty of Science and Engineering School of Advanced Science and Engineering


Job title： Professor
Homepage URL  (1)： http://www.eb.waseda.ac.jp/makimoto/
Research field  (1)： Electric/electronic material engineering
Research keywords  (1)： III-V compound semiconductors, nitride semiconductors, crystal growth, semiconductor devices
Research theme for competitive and other funds  (3)：
  • 2019 - 2022 高品質GaAsN系超格子の成長と励起子に関する研究
  • 2014 - 2017 Growth of BN on graphene by RF-MBE
  • 2006 - 2009 Research on hexagonal boron nitride semiconductors
Papers (228)：
  • Takashi Tsukasaki, Hisashi Sumikura, Takuma Fujimoto, Miki Fujita, Toshiki Makimoto. Recombination mechanism of heavily Be-doped GaAsN by time-resolved photoluminescence. Journal of Vacuum Science & Technology A. 2023. 41. 5
  • Takashi Tsukasaki, Naoki Mochida, Miki Fujita, Toshiki Makimoto. Electrical properties of heavily Si-doped GaAsN after annealing. Physica B: Condensed Matter. 2022. 625
  • Takashi Tsukasaki, Ren Hiyoshi, Miki Fujita, Toshiki Makimoto. Correction: Photoluminescence Mechanism in Heavily Si-Doped GaAsN (Crystal Research and Technology, (2021), 56, 3, (2000143), 10.1002/crat.202000143). Crystal Research and Technology. 2021. 56. 11
  • Takashi Tsukasaki, Ren Hiyoshi, Miki Fujita, Toshiki Makimoto. Photoluminescence Mechanism in Heavily Si-Doped GaAsN. Crystal Research and Technology. 2021. 56. 3. 2000143-2000143
  • T. Tsukasaki, R. Hiyoshi, M. Fujita, T. Makimoto. Si doping mechanism in Si doped GaAsN. J. Cryst. Growth. 2019. 514. 45-48
ｍore...
MISC (12)：
  • Masanobu Hiroki, Kazuhide Kumakura, Yasuyuki Kobayashi, Tetsuya Akasaka, Toshiki Makimoto, Hideki Yamamoto. Suppression of self-heating effect in AlGaN/GaN high electron mobility transistors by substrate-transfer technology using h-BN (vol 105, 193509, 2014). APPLIED PHYSICS LETTERS. 2015. 106. 4
  • 牧本 俊樹. SiC基板上に作製した窒化物半導体デバイスの現状と将来 (特集:次世代半導体デバイスとしてのSiC単結晶を用いたオプトメカトロニクス技術). 光技術コンタクト. 2006. 44. 12. 699-708
  • AKASAKA Tetsuya, KOBAYASHI Yasuyuki, MAKIMOTO Toshiki. GaN Heteroepitaxy on Si(111) substrates Using AlN/AlGaN Superlattice Buffer Layers. 2006. 2006. 198-199
  • KOBAYASHI Yasuyuki, HIBINO Hiroki, NAKAMURA Tomohiro, AKASAKA Tetsuya, MAKIMOTO Toshiki, MATSUMOTO Nobuo. Hexagonal Boron Nitride Heteroepitaxial Layers on Graphitized 6H-SiC Substrate Grown by Metalorganic Vapor Phase Epitaxy. 2006. 2006. 202-203
  • Kasu Makoto, Ueda Kenji, Tallaire Alexandre, Yamauchi Yoshiharu, Makimoto Toshiki. C-10-11 RF Characteristics and Equivalent-Circuit Analysis of Diamond FETs. Proceedings of the Society Conference of IEICE. 2006. 2006. 2. 52-52
ｍore...
Patents (4)：
  • 窒化物半導体層の成長方法
  • ヘテロ構造およびその製造方法
  • 窒化物半導体結晶成長方法
  • 窒化物半導体の成長方法
Education (2)：
  • - 1985 University of Tokyo Graduate School, Division of Engineering Electric engineering
  • - 1983 University of Tokyo Faculty of Engineering Electric engineering
Professional career (1)：
  • Dr.Eng (University of Tokyo)
Work history (11)：
  • 2013/04 - 現在: 早稲田大学・先進理工学部・教授
  • 2011/07 - 2013/03 : NTT物性科学基礎研究所・所長
  • 2010/10 - 2011/06 : NTT物性科学基礎研究所・機能物質科学部・部長
  • 2007/07 - 2010/09 : NTT物性科学基礎研究所・企画担当
  • 2003/04 - 2007/06 : NTT物性科学基礎研究所・グループリーダ
Show all
Awards (2)：
  • 2015/04 - 平成27年度文部科学大臣表彰受賞(科学技術賞研究部門)
  • 2014/09 - 応用物理学会フェロー表彰
Association Membership(s) (2)：
IEICE (Institute of Electronics, Information and Communication Engineers) ,  Society of Applied Physics of Japan
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