Rchr
J-GLOBAL ID:201301074692078670   Update date: Jun. 21, 2021

Matsumura Ryo

マツムラ リョウ | Matsumura Ryo
Affiliation and department:
Job title: Researcher
Research field  (1): Electric/electronic material engineering
Research keywords  (2): Electronic Device ,  Semiconductor
Research theme for competitive and other funds  (6):
  • 2020 - 2023 Realize of GeSn/Ge vertical nanowire and its application to next generation transitor
  • 2021 - 2022 レーザーアニールを用いたGeSn結晶薄膜の非熱平衡成長とトランジスタ応用
  • 2020 - 2021 Research of GeSn Nanowire Transistor
  • 2017 - 2019 絶縁基板上におけるボトムアップ型Siナノワイヤ成長技術の創製
  • 2016 - 2019 次世代LSIの実現へ向けた 高性能ゲルマニウム・スズ・トランジスタの創製
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Papers (52):
  • Ryo Matsumura, Satoshi Ishii, Naoki Fukata. Growth of SiGe thin films with uniform and non-uniform Si concentration profiles on insulating substrates by high-speed continuous wave laser annealing. Materials Science in Semiconductor Processing. 2021. 134. 106024-106024
  • Ryo Matsumura, Naoki Fukata. Growth of High Sn Concentration Germanium-Tin Films on Insulators by Microsecond Laser Annealing. ECS Transactions. 2021. 102. 2. 141-146
  • Rahmat Hadi Saputro, Ryo Matsumura, Naoki Fukata. Epitaxial Growth of Highly Sb-Doped Ge on p-Ge (100) for Vertical Transistor Applications. ECS Transactions. 2021. 102. 2. 147-150
  • ラハマト ハディ サプトロ, 松村 亮, 深田. Sb 添加Ge 縦型pn ダイオードの電気特性に及ぼす基板加熱堆積の効果. 電子デバイス界面テクノロジー研究会 -材料・プロセス・デバイス特性の物理-プロシーディング集. 2021. 133-136
  • 松村亮, 深田直樹. 高速CWレーザーアニール法を用いたGeおよびGeSn材料の結晶成⻑. 電子デバイス界面テクノロジー研究会 -材料・プロセス・デバイス特性の物理-プロシーディング集. 2021. 63-66
more...
MISC (3):
Lectures and oral presentations  (11):
  • Analysis and control of Si segregation phenomena to achieve uniform-SiGe crystals on insulator by rapid-melting growth
    (2015 International Electron Devices and Materials Symposium, IEDMS 2015 2015)
  • Segregation-Controlled Rapid-Melting Growth for Sige-on-Insulator with Uniform Lateral Composition
    (24th International Materials Research Congress, IMRC2015 2015)
  • Low Temperature (<200oC) position controlled Solid Phase Crystallization of GeSn combined with Laser Anneal Seeding
    (ICSI 9 2015)
  • Low-Temperature Crystallization of a-GeSn on Insulating Films for Next-Generation Flexible Electronics(1) Characteristics of Solid Phase Crystallization
    (2014 International Electron Devices and Materials Symposium, IEDMS 2014 2014)
  • Segregation-Controlled Rapid-Melting Growth for Large-Grain and Uniform -Composition SiGe on Insulator” (JSPS International Core-to-Core Program Workshop on Atomically Controlled Processing for Ultra-large Scale Integration
    (JSPS-imec 2014 2014)
more...
Education (3):
  • 2013 - 2016 Kyushu University Department of Electrical Engineering
  • 2011 - 2013 Kyushu Unviersity Department of Electrical Engineering
  • 2006 - 2011 Kyushu University Department of Electrical Engineering and Computer Science
Professional career (1):
  • Dr. of Eng. (Kyushu University)
Work history (4):
  • 2017/04 - 現在 National Institute for Materials Science MANA Researcher
  • 2016/04 - 2017/03 JSPS Research Fellow SPD
  • 2014/04 - 2016/03 JSPS Research Fellow DC2
  • 2013/04 - 2014/03 九州電気専門学校 非常勤講師
Committee career (2):
  • 2020/04 - 現在 EDIT comittee
  • 2017/04 - 現在 TIA次世代エレクトロニクス研究アライアンス TIA-EXA/運営委員
Awards (4):
  • 2016/03 - Kyushu University Student Award
  • 2016 - International Conference on Solid State Devices and Materials (SSDM) Young Researcher Award
  • 2015/12 - 2015 International Electron Devices and Materials Symposium (IEDMS2015) Best Paper Award
  • 2013 - 5th Semiconductor Materials and Device Forum Presentation Award
Association Membership(s) (1):
THE JAPAN SOCIETY OF APPLIED PHYSICS
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