Rchr
J-GLOBAL ID:201301074692078670   Update date: Jul. 19, 2023

Matsumura Ryo

マツムラ リョウ | Matsumura Ryo
Affiliation and department:
Job title: Senior Researcher
Research field  (1): Electric/electronic material engineering
Research keywords  (3): 結晶成長 ,  Electronic Device ,  Semiconductor
Research theme for competitive and other funds  (7):
  • 2023 - 2026 Crystal growth of Ge-based optical materials on insulating films for optoelectronic fusion LSI and their application to optoelectronic devices
  • 2020 - 2023 Realize of GeSn/Ge vertical nanowire and its application to next generation transitor
  • 2021 - 2022 レーザーアニールを用いたGeSn結晶薄膜の非熱平衡成長とトランジスタ応用
  • 2020 - 2021 Research of GeSn Nanowire Transistor
  • 2017 - 2019 絶縁基板上におけるボトムアップ型Siナノワイヤ成長技術の創製
Show all
Papers (57):
  • Ryo Matsumura, Naoki Fukata. Direct Detection of Free H2Outgassing in Blisters Formed in Al2O3Atomic Layers Deposited on Si and Methods of Its Prevention. ACS Applied Materials and Interfaces. 2022. 14. 1. 1472-1477
  • Ryo Matsumura, Naoki Fukata. Formation of Free Hydrogen Gas By Annealing ALD-Al2O3/Si Stacked Structure. ECS Transactions. 2022. 108. 5. 57-61
  • Rahmat Hadi Saputro, Ryo Matsumura, Naoki Fukata. Crystallization Of Tensile Strained n-Type Ge By Continuous Wave Laser Annealing. ECS Transactions. 2022. 108. 5. 79-82
  • Rahmat Hadi Saputro, Ryo Matsumura, Naoki Fukata. Dopant Redistribution in High-Temperature-Grown Sb-Doped Ge Epitaxial Films. Crystal Growth and Design. 2021. 21. 11. 6523-6528
  • Ryo Matsumura, Satoshi Ishii, Naoki Fukata. Growth of SiGe thin films with uniform and non-uniform Si concentration profiles on insulating substrates by high-speed continuous wave laser annealing. Materials Science in Semiconductor Processing. 2021. 134. 106024-106024
more...
MISC (4):
Lectures and oral presentations  (11):
  • Analysis and control of Si segregation phenomena to achieve uniform-SiGe crystals on insulator by rapid-melting growth
    (2015 International Electron Devices and Materials Symposium, IEDMS 2015 2015)
  • Segregation-Controlled Rapid-Melting Growth for Sige-on-Insulator with Uniform Lateral Composition
    (24th International Materials Research Congress, IMRC2015 2015)
  • Low Temperature (<200oC) position controlled Solid Phase Crystallization of GeSn combined with Laser Anneal Seeding
    (ICSI 9 2015)
  • Low-Temperature Crystallization of a-GeSn on Insulating Films for Next-Generation Flexible Electronics(1) Characteristics of Solid Phase Crystallization
    (2014 International Electron Devices and Materials Symposium, IEDMS 2014 2014)
  • Segregation-Controlled Rapid-Melting Growth for Large-Grain and Uniform -Composition SiGe on Insulator” (JSPS International Core-to-Core Program Workshop on Atomically Controlled Processing for Ultra-large Scale Integration
    (JSPS-imec 2014 2014)
more...
Education (3):
  • 2013 - 2016 Kyushu University Graduate School and Faculty of Information Science and Electrical Engineering Department of Electrical Engineering
  • 2011 - 2013 Kyushu Unviersity Graduate School and Faculty of Information Science and Electrical Engineering Department of Electrical Engineering
  • 2006 - 2011 Kyushu University School of Engineering Department of Electrical Engineering and Computer Science
Professional career (1):
  • Dr. of Eng. (Kyushu University)
Work history (5):
  • 2023/04 - 現在 National Institute for Materials Science Research Center for Materials Nanoarchitectonics Senior Reseacher
  • 2017/04 - 2023/03 National Institute for Materials Science MANA Researcher
  • 2016/04 - 2017/03 JSPS Research Fellow SPD
  • 2014/04 - 2016/03 JSPS Research Fellow DC2
  • 2013/04 - 2014/03 九州電気専門学校 非常勤講師
Committee career (3):
  • 2023/04 - 現在 SSDM Area10 Vice Chair
  • 2020/04 - 現在 EDIT comittee
  • 2017/04 - 2022/03 TIA次世代エレクトロニクス研究アライアンス TIA-EXA/運営委員
Awards (4):
  • 2016/03 - Kyushu University Student Award
  • 2016 - International Conference on Solid State Devices and Materials (SSDM) Young Researcher Award
  • 2015/12 - 2015 International Electron Devices and Materials Symposium (IEDMS2015) Best Paper Award
  • 2013 - 5th Semiconductor Materials and Device Forum Presentation Award
Association Membership(s) (1):
THE JAPAN SOCIETY OF APPLIED PHYSICS
※ Researcher’s information displayed in J-GLOBAL is based on the information registered in researchmap. For details, see here.

Return to Previous Page