Art

J-GLOBAL ID：201302213683594480   Reference number：13A0956841

Electrolyte-Gated SmCoO₃ Thin-Film Transistors Exhibiting Thickness-Dependent Large Switching Ratio at Room Temperature

室温で大きな膜厚依存スイッチング比を示す電解質ゲートSmCoO₃薄膜トランジスタ

Author (12)： XIANG Ping-Hua (National Inst. Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  XIANG Ping-Hua (JST-CREST, Kawaguchi, JPN) ,  ASANUMA Shutaro (National Inst. Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  ASANUMA Shutaro (JST-CREST, Kawaguchi, JPN) ,  YAMADA Hiroyuki (National Inst. Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  SATO Hiroshi (National Inst. Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  INOUE Isao H. (National Inst. Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  AKOH Hiroshi (National Inst. Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  AKOH Hiroshi (JST-CREST, Kawaguchi, JPN) ,  SAWA Akihito (National Inst. Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  KAWASAKI Masashi ,  IWASA Yoshihiro
Material： Advanced Materials  (Adv Mater (Deerfield, Fla.))
Volume： 25  Issue： 15  Page： 2158-2161  Publication year： Apr. 18, 2013 
JST Material Number： W0001A  ISSN： 0935-9648  CODEN： ADVMEW  Document type： Article
Article type： 短報  Country of issue： Germany, Federal Republic of (DEU)  Language： ENGLISH (EN)

Thesaurus term： dependence ,  *electrolyte ,  *cobaltate ,  *samarium compound ,  *thin film transistor ,  perovskite type crystal ,  Mott transition ,  ionic liquid ,  transistor ,  Thomas-Fermi model ,  two dimension ,  switching ,  temperature dependence ,  aluminate ,  lanthanum compound ,  current-voltage characteristic ,  calcium compound ,  film thickness ,  film thickness dependence
Semi thesaurus term： on-off ratio ,  gate voltage ,  drain current ,  electric double layer transistor

JST classification (3)： Transistors  (NC03070N) ,  Bases,metal oxides  (CD01030Z) ,  Other contacts of semiconductors  (BM03086O)

Substance index (1)： 2-Methoxyethyldiethylmethylaminium

Terms in the title (6)： 室温 ,  膜厚 ,  スイッチング ,  電解質 ,  ゲート ,  薄膜トランジスタ