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J-GLOBAL ID:201302235970667190   Reference number:13A0892767

1Mb 4T-2MTJ Nonvolatile STT-RAM for Embedded Memories Using 32b Fine-Gained Power Gating Technique-Achieves 1.0ns/200ps Wake-Up/Power-Off Times-

32ビット細粒度パワーゲーティングを使った不揮発性混載用1Mb4T2MTJ STT-RAM-1.0ns/200psのWake-up/Power-off時間を達成-
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Material:
Volume: 113  Issue: 1(ICD2013 1-23)  Page: 27-32  Publication year: Apr. 04, 2013 
JST Material Number: S0532B  ISSN: 0913-5685  Document type: Proceedings
Article type: 原著論文  Country of issue: Japan (JPN)  Language: JAPANESE (JA)
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Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
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Semiconductor integrated circuit  ,  Magnetoelectric devices 

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