Art

J-GLOBAL ID：201302237307881009   Reference number：13A1079368

Kinetics of hydrogen adsorption and desorption on Si(100) surfaces

Si(100)表面への水素吸着と脱着の動力学

Author (3)： NARITA Yuzuru (Dep. of Electrical Engineering, Yamagata Univ., 4-3-16 Jonan, Yonezawa-shi, Yamagata 992-8510, JPN) ,  INANAGA Shoji (Dep. of Electrical and Electronics Engineering, Kyushu Inst. of Technol. 1-1 Sensui-cho, Tobata-ku, Kitakyushu-shi ...) ,  NAMIKI Akira (Dep. of Electrical and Electronics Engineering, Kyushu Inst. of Technol. 1-1 Sensui-cho, Tobata-ku, Kitakyushu-shi ...)
Material： Journal of Applied Physics  (Journal of General Physics and its Application to Other Sciences and to Industry)
Volume： 113  Issue： 23  Page： 234309-234309-8  Publication year： Jun. 21, 2013 
JST Material Number： C0266A  ISSN： 0021-8979  CODEN： JAPIAU  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： *silicon ,  hydrogenation ,  *hydrogen storage ,  *desorption ,  dimer ,  reaction path ,  potential energy ,  sticking coefficient ,  *hydrogen adsorption ,  hydrogen terminated ,  *hydrogen desorption ,  energy ,  mechanical quantity
Semi thesaurus term： dimer ,  hydrogenation ,  sticking probability

JST classification (1)： Solid-gos interface in general.  (CB12041H)

Terms in the title (4)： Si ,  水素吸着 ,  脱着 ,  動力学