Art

J-GLOBAL ID：201302238537498235   Reference number：13A0531912

Power Electronics Equipment Applying SiC Devices

SiCデバイスを用いたパワーエレクトロニクス装置

Author (3)： MATSUMOTO Yasushi (Fuji Electric Co., Ltd.) ,  KONDO Yasushi (Fuji Electric Co., Ltd.) ,  KIMURA Hiroshi (Fuji Electric Co., Ltd.)
Material： Fuji Electric Review  (Fuji Electr Rev)
Volume： 58  Issue： 4  Page： 212-216  Publication year： Dec. 20, 2012 
JST Material Number： S0167A  ISSN： 0429-8284  CODEN： FUERB  Document type： Article
Article type： 原著論文  Country of issue： Japan (JPN)  Language： ENGLISH (EN)

Thesaurus term： *power electronics ,  band gap ,  *silicon carbide ,  weight reduction ,  *inverter ,  equipment ,  solar photovoltaic generation ,  circuit module ,  semiconductor ,  energy efficiency
Semi thesaurus term： *SiC ,  power module ,  power controller

JST classification (2)： Power converters  (NB08030B) ,  Solar photovoltaic generation  (NB03090G)

Reference (5)：

• (1) TSUJI, T. et al.“Experimental demonstration of 1,200 V SiC-SBDs with Lower Forward Voltage Drop at High Temperature.”Proceedings of ICSCRM 2011. Tu-P-27, 2011, p.205-208.
• (2) NAKAZAWA, M. Hybrid Si-IGBT and SiC-SBD Modules. FUJI ELECTRIC REVIEW. 2012 vol.58, no.2, p.70-74.
• (3) HARADA, S. et al.“High Performance SiC-IEMOSFET/SBD Module.”Proceedings of ICSCRM 2011, MO-3 A-1, 2011, p.52-57.
• (4) HORIO, M. et al.“New Power Module Structure with Lower Thermal Impedance and High Reliability for SiC Devices.”Proceedings of PCIM Europe. 2011.Proceeding CD. 2011. p229-234.
• (5) IKEDA, Y. et al.“Investigation on Wirebond-less Power Module Structure with High-Density Packaging and High reliability.”Proceedings of International Symposium on Power Semiconductor Devices and IC's 2011. Proceeding CD. p.272-275.80PLUS Program, http://www.80plus.org. (accessed 2012-04-10).

Terms in the title (2)： SiC ,  パワーエレクトロニクス