Art

J-GLOBAL ID：201302253050066150   Reference number：13A0794484

Suppressing V_t and G_m Variability of FinFETs Using Amorphous Metal Gates for 14nm and Beyond

14nm及びそれを超えて,非晶質金属ゲートを用いたFinFETのV_t及びG_m可変性の抑制

Author (12)： MATSUKAWA Takashi (National Inst. Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  LIU Yongxun (National Inst. Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  MIZUBAYASHI Wataru (National Inst. Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  TSUKADA Junichi (National Inst. Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  YAMAUCHI Hiromi (National Inst. Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  ENDO Kazuhiko (National Inst. Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  ISHIKAWA Yuki (National Inst. Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  O'UCHI Shin-ichi (National Inst. Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  OTA Hiroyuki (National Inst. Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  MIGITA Shinji (National Inst. Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  MORITA Yukinori (National Inst. Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  MASAHARA Meishoku (National Inst. Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN)
Material： Technical Digest. International Electron Devices Meeting  (IEEE International Electron Devices Meeting)
Volume： 2012  Page： 175-178  Publication year： 2012 
JST Material Number： C0829B  ISSN： 0163-1918  Document type： Proceedings
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： *voltage ,  *mutual conductance ,  *amorphous metal ,  *gate (semiconductor) ,  *FET ,  fin (machine element) ,  tantalum compound ,  silicon compound ,  nitride ,  work function ,  carrier capture ,  *variability ,  polycrystal ,  threshold voltage ,  interface trap ,  trap density
Semi thesaurus term： FinFET

JST classification (1)： Transistors  (NC03070N)

Terms in the title (5)： 非晶質金属 ,  ゲート ,  FinFET ,  VT ,  可変性