Rchr
J-GLOBAL ID：200901052848915988
Update date: May. 09, 2020
Mizubayashi Wataru
ミズバヤシ ワタル | Mizubayashi Wataru
Affiliation and department：
National Institute of Advanced Industrial Science and Technology
About National Institute of Advanced Industrial Science and Technology
Search "National Institute of Advanced Industrial Science and Technology"
Homepage URL (1)：
http://www.aist.go.jp/RESEARCHERDB/cgi-bin/worker_detail.cgi?call=namae&rw_id=W52205062
MISC (9)：
還元雰囲気下でのゲート電極形成プロセスによるHfO2膜の初期絶縁破壊. シリコンテクノロジー. 2006. 82. 2. 45-49
還元雰囲気下でのゲート電極形成プロセスによるHfO2膜の初期絶縁破壊. 電子情報通信学会技術研究報告. 2006. 106. 108. 107-111
W Mizubayashi, N Yasuda, K Okada, H Ota, H Hisamatsu, K Iwamoto, K Tominaga, K Yamamoto, T Horikawa, T Nabatame, et al. Carrier separation analysis for clarifying carrier conduction and degradation mechanisms in high-k stack gate dielectrics. MICROELECTRONICS RELIABILITY. 2005. 45. 7-8. 1041-1050
A Toriumi, K Iwamoto, H Ota, M Kadoshima, W Mizubayashi, T Nabatame, A Ogawa, K Tominaga, T Horikawa, H Satake. Advantages of HfAlON gate dielectric film for advanced low power CMOS application. MICROELECTRONIC ENGINEERING. 2005. 80. 190-197
キャリア分離法を用いたhigh-k stackゲート絶縁膜のキャリア伝導及び絶縁性劣化機構の解析. 電気学会研究会論文. 2005. 19-24
ｍore...
※ Researcher’s information displayed in J-GLOBAL is based on the information registered in
researchmap
.
For details, see here
.
Return to Previous Page
TOP
BOTTOM
