Art

J-GLOBAL ID：201402262110918018   Reference number：14A1378559

SnO₂ thin films grown by atomic layer deposition using a novel Sn precursor

新規のSn前駆体を用いて原子層堆積により成長させたSnO₂薄膜

Author (21)： CHOI Min-jung (Electronic Materials Res. Center, Korea Inst. of Sci. and Technol., Seoul, 136-791, KOR) ,  CHOI Min-jung (Dep. of Materials Sci. and Engineering, Yonsei Univ., Seoul, 120-749, KOR) ,  CHO Cheol Jin (Electronic Materials Res. Center, Korea Inst. of Sci. and Technol., Seoul, 136-791, KOR) ,  CHO Cheol Jin (Dep. of Materials Sci. and Engineering, Seoul National Univ., Seoul, 151-744, KOR) ,  KIM Kwang-chon (Electronic Materials Res. Center, Korea Inst. of Sci. and Technol., Seoul, 136-791, KOR) ,  PYEON Jung Joon (Electronic Materials Res. Center, Korea Inst. of Sci. and Technol., Seoul, 136-791, KOR) ,  PARK Hyung-ho (Dep. of Materials Sci. and Engineering, Yonsei Univ., Seoul, 120-749, KOR) ,  KIM Hyo-suk (Div. of Advanced Materials, Korea Res. Inst. of Chemical Technol. (KRICT), Daejeon, 305-600, KOR) ,  HAN Jeong Hwan (Div. of Advanced Materials, Korea Res. Inst. of Chemical Technol. (KRICT), Daejeon, 305-600, KOR) ,  KIM Chang Gyoun (Div. of Advanced Materials, Korea Res. Inst. of Chemical Technol. (KRICT), Daejeon, 305-600, KOR) ,  CHUNG Taek-mo (Div. of Advanced Materials, Korea Res. Inst. of Chemical Technol. (KRICT), Daejeon, 305-600, KOR) ,  PARK Tae Joo (Dep. of Materials Sci. & Engineering, Hanyang Univ., Ansan, 426-791, KOR) ,  KWON Beomjin (Electronic Materials Res. Center, Korea Inst. of Sci. and Technol., Seoul, 136-791, KOR) ,  JEONG Doo Seok (Electronic Materials Res. Center, Korea Inst. of Sci. and Technol., Seoul, 136-791, KOR) ,  JEONG Doo Seok (Dep. of Nanomaterials, Korea Univ. of Sci. and Technol., Daejeon, 305-333, KOR) ,  BAEK Seung-hyub (Electronic Materials Res. Center, Korea Inst. of Sci. and Technol., Seoul, 136-791, KOR) ,  BAEK Seung-hyub (Dep. of Nanomaterials, Korea Univ. of Sci. and Technol., Daejeon, 305-333, KOR) ,  KANG Chong-yun (Electronic Materials Res. Center, Korea Inst. of Sci. and Technol., Seoul, 136-791, KOR) ,  KIM Jin-sang (Electronic Materials Res. Center, Korea Inst. of Sci. and Technol., Seoul, 136-791, KOR) ,  KIM Seong Keun (Electronic Materials Res. Center, Korea Inst. of Sci. and Technol., Seoul, 136-791, KOR) ,  KIM Seong Keun (Dep. of Nanomaterials, Korea Univ. of Sci. and Technol., Daejeon, 305-333, KOR)
Material： Applied Surface Science  (Appl Surf Sci)
Volume： 320  Page： 188-194  Publication year： Nov. 30, 2014 
JST Material Number： B0707B  ISSN： 0169-4332  Document type： Article
Article type： 原著論文  Country of issue： Netherlands (NLD)  Language： ENGLISH (EN)

Thesaurus term： *tin oxide ,  *thin film growth ,  *precursor (substance) ,  tin ,  Ozone ,  secondary ion mass spectrometry ,  impurity concentration ,  atomic force microscope ,  *chemical vapor deposition ,  compound semiconductor ,  amorphous semiconductor ,  semiconductor thin film ,  Microscopy ,  X-ray photoelectron spectrum ,  Auger spectrum ,  aspect ratio ,  *tin dioxide ,  growing temperature
Semi thesaurus term： *ALD

JST classification (1)： Oxide thin films  (BK14050P)

Substance index (1)： Bis[1-(dimethylamino)-2-methylpropane-2-yloxy] tin(II)

Terms in the title (6)： Sn ,  前駆体 ,  原子層堆積 ,  成長 ,  SnO2 ,  薄膜