Open circuit voltage decay characteristics of 4H-SiC p-i-n diode with carbon implantation

TANAKA Atsushi; NAKAYAMA Koji; ASANO Katsunori; MIYAZAWA Tetsuya; TSUCHIDA Hidekazu

Art

J-GLOBAL ID：201402296034569337 Reference number：14A0575678

Open circuit voltage decay characteristics of 4H-SiC p-i-n diode with carbon implantation

炭素注入した4H-SiC p-i-nダイオードの開回路電圧減衰特性

Publisher site {{ this.onShowPLink() }} Copy service {{ this.onShowCLink("http://jdream3.com/copy/?sid=JGLOBAL&noSystem=1&documentNoArray=14A0575678&COPY=1") }}
Access JDreamⅢ for advanced search and analysis. {{ this.onShowJLink("http://jdream3.com/lp/jglobal/index.html?docNo=14A0575678&from=J-GLOBAL&jstjournalNo=G0520B") }}

Author (5)： , , , ,
Material：
Volume： 53 Issue： 4S Page： 04EP08.1-04EP08.4 Publication year： Apr. 2014
JST Material Number： G0520B ISSN： 0021-4922 CODEN： JJAPB6 Document type： Article
Article type：原著論文 Country of issue： United Kingdom (GBR) Language： ENGLISH (EN)

, , , , , , ,

Diodes , Semiconductor thin films , Measurement,testing and reliability of solid-state devices

Reference (28)：

Y. Sugawara, K. Asano, R. Singh, and J. W. Palmour, Proc. Int. Conf. Silicon Carbide and Related Materials, 1999, p. 170.
L. Cheng, A. K. Agarwal, M. O'Loughlin, C. Capell, K. Lam, C. Jonas, J. Richmond, A. Burk, J. W. Palmour, A. A. Ogunniyi, H. K. O'Brien, and C. J. Scozzie, Mater. Sci. Forum 740-742, 895 (2013).
Y. Sugawara, D. Takayama, K. Asano, A. Agarwal, S. Ryu, J. Palmour, and S. Ogata, Proc. Int. Symp. Power Semiconductor Devices and ICs, 2004, p. 365.
L. Cheng, A. K. Agarwal, C. Capell, M. O'Loughlin, K. Lam, J. Zhang, J. Richmond, A. Burk, J. W. Palmour, A. A. Ogunniyi, H. K. O'Brien, and C. J. Scozzie, Mater. Sci. Forum 740-742, 978 (2013).
M. K. Das, Q. J. Zhang, R. Callanan, C. Capell, J. Clayton, M. Donofrio, S. K. Haney, F. Husna, C. Jonas, J. Richmond, and J. J. Sumakeris, Mater. Sci. Forum 600-603, 1183 (2009).

ｍore...

, , , , ,

Return to Previous Page