Art

J-GLOBAL ID：201502247272173081   Reference number：15A0192714

Fabrication of single crystalline p-i-n nanocolumns array on a sputter-deposited thin film

スパッタ膜上への窒化物単結晶pinナノコラム作製

Author (6)： NOMA TOMOHIRO (上智大 理工) ,  HAYASHI HIROAKI (上智大 理工) ,  FUKUSHIMA DAISHI (上智大 理工) ,  KONNO YUTA (上智大 理工) ,  NOMURA ICHIRO (上智大 理工) ,  KISHINO KATSUMI (上智大 理工)
Material： 電子情報通信学会技術研究報告  (IEICE Technical Report (Institute of Electronics, Information and Communication Engineers))
Volume： 114  Issue： 336(ED2014 73-97)  Page： 117-120  Publication year： Nov. 20, 2014 
JST Material Number： S0532B  ISSN： 0913-5685  Document type： Proceedings
Article type： 原著論文  Country of issue： Japan (JPN)  Language： JAPANESE (JA)

Thesaurus term： *sputtered deposition ,  *evaporated film ,  silicon ,  *wafer ,  *aluminum nitride ,  *nanostructure ,  *columnar crystal ,  *thin film growth ,  nucleation ,  transmission electron microscope ,  electron microscopy ,  photoluminescence ,  radiant intensity ,  *single crystal ,  indium compound ,  gallium compound ,  nitride ,  multiple quantum well ,  layer ,  pattern formation ,  emission intensity ,  emission layer ,  gallium indium nitride
Semi thesaurus term： nanocolumn ,  InGaN

JST classification (3)： Crystal growth of semiconductors  (BK13040X) ,  Manufacturing technology of solid-state devices  (NC03030V) ,  Light emitting devices  (NC03082G)

Reference (8)：

• M. Yoshizawa, A. Kikuchi, M. Mori, N. Fujita, and K. Kishino, ” Growth of Self-Organized GaN Nanostructures on Al2O3(0001) by RF-Radical Source Molecular Beam Epitaxy”. Jpn. J. Appl. Phys, Vol.36, pp.L459-462, Apr.1997.
• K. Kishino, H. Sekiguchi, and A. Kikuchi, ” Improved Ti-mask selective-area growth (SAG) by rf-plasma-assisted molecular beam epitaxy demonstrating extremely uniform GaN nanocolumn arrays”. J. Cryst. Growth, Vol.311, pp.L2063-2068, Mar.2009.
• H. Hayashi, T. Ozaki, I. Matsuyama, A. Mizuno, A. Yanagihara, and K. Kishino, ”Selective area growth of well-ordered GaN nanocolumn arrays on sputter-deposited AlN buffers/Si (111) substrates by RF -plasma assisted MBE”, 10th International Conference on Nitride Semiconductors A8.05, Aug.2013.
• D. Fukushima, H. Hayashi, Y. Konnno, and K. Kishino, ” Mechanism of raising nitride nanocolumns quality on a sputter-deposited AlN/Si (111) substrate”, 2014 Materials Research Society fall meeting and exhibition, LL5-25, Nov.2014.
• A. Watanabe, T. Takeuchi, K. Hirosawa, H. Amano, K. Hiramatsu, and I. Akasaki, ” The growth of single crystalline GaN on a Si substrate using AlN as an intermediate layer”, J. Cryst. Growth, Vol.128, pp.391-396, Mar.1993.

Terms in the title (5)： スパッタ膜 ,  窒化物 ,  単結晶 ,  ナノコラム ,  作製