Rchr
J-GLOBAL ID:201601006373906419   Update date: Aug. 30, 2024

Nakamura Yusui

ナカムラ ユウスイ | Nakamura Yusui
Affiliation and department:
Job title: Professor
Research field  (1): Thin-film surfaces and interfaces
Research theme for competitive and other funds  (6):
  • 2023 - 2026 Gate insulator deposition process for GaN-based MOS devices using mist-CVD technique
  • 2019 - 2022 Surface passivation and insulated gate structures for nitride-based semiconductor devices using mist-CVD method
  • 2019 - 2021 2019年4月
  • 2015 - 2018 Fabrication of low-cost oxide LED without minor metals and toxic elements by atmospheric pressure film formation method
  • 2008 - 2010 Fabrication of injection-type infrared light emitting devices for high-speed integrated circuits and investigation of the light emission mechanism
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Papers (87):
  • Takeshi Shinkai, Jonas Karl Christopher N. Agutaya, Biplab Manna, Matthias Boepple, Masaru Iwai, Keigo Masumoto, Kanako Koga, Koki Kawanami, Yusui Nakamura, Armando T. Quitain, et al. Ethanol sensing mechanism of ZnO nanorods revealed by DRIFT spectroscopy and DFT calculations. Journal of Materials Chemistry A. 2024
  • Zenji Yatabe, Yusui Nakamura, Joel T. Asubar. Mist chemical vapor deposited-gate insulators for GaN-based MIS devices applications. 2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK). 2022. 1-3
  • S. Urano, R. S. Low, M. Faris, M. Ishiguro, I. Nagase, A. Baratov, J. T. Asubar, T. Motoyama, Y. Nakamura, Z. Yatabe, et al. Electrical properties of GaN-based MISHEMTs with Al2O3 gate insulator deposited by ALD and mist-CVD techniques. 2021 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK). 2021. 1-2
  • Tomohiro Motoyama, Zenji Yatabe, Yusui Nakamura, Ali Baratov, Rui Shan Low, Shun Urano, Joel T. Asubar, Masaaki Kuzuhara. Mist chemical vapor deposited-Al2O3/AlGaN interfacial characterization for GaN MIS-HEMTs. 2021 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK). 2021. 1-2
  • Rui Shan Low, Joel T. Asubar, Ali Baratov, Shunsuke Kamiya, Itsuki Nagase, Shun Urano, Shinsaku Kawabata, Hirokuni Tokuda, Masaaki Kuzuhara, Yusui Nakamura, et al. GaN-based MIS-HEMTs with Al2O3 dielectric deposited by low-cost and environmental-friendly mist-CVD technique. Applied Physics Express. 2021. 14. 3. 031004-1-031004-5
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MISC (25):
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Patents (1):
  • 酸化亜鉛結晶層の製造方法及び酸化亜鉛結晶層並びにミスト化学気相成長装置
Works (41):
  • ミストCVD法により作製したAl2O3薄膜とGaN系MIS-HEMTへの応用
    本山 智洋, Ali Baratov, Rui Shan Low, 浦野 駿, 中村 有水, 葛原 正明, Joel T. Asubar, 谷田部 然治 2021 -
  • 高感度VOCセンシングのための垂直配向ZnOナノロッドアレイ
    愼改 豪, 古賀 佳菜子, 川浪 弘貴, 中村 有水, 木田 徹也, Matthias Bopple, Nicolae Barsan 2020 -
  • Mist-CVD法によるAl2O3絶縁膜を用いたAlGaN/GaN MIS-HEMTの電気特性
    Low RuiShan, 河端 晋作, Asubar Joel, 徳田 博邦, 葛原 正明, 谷田部 然治, 内藤 健太, 西村 和樹, 中村 有水 2020 -
  • ミストCVD法によるサファイア基板上a面及びm面ZnO薄膜結晶の品質向上
    永尾 悠生, 田中 雄大, 須恵 耕二, 永岡 昭二, 谷田部 然治, 中村 有水 2019 -
  • ミストCVD法によるアモルファスAl2O3薄膜の作製と評価
    西村 和樹, 西山 光士, 藤元 佑紀, 谷田部 然治, 中村 有水 2019 -
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Education (4):
  • - 1999 博士(工学)(東京大学 大学院 工学系研究科 論文博士)
  • - 1989 Tohoku University
  • - 1983 Iwate University Faculty of Engineering
  • - 1981 Iwate University Faculty of Engineering
Professional career (1):
  • Doctor of Engineering (The University of Tokyo)
Work history (3):
  • 2016 - 現在 Kumamoto University
  • 2006 - 2016 Kumamoto University Graduate School of Science and Technology
  • 2004 - 2006 Kumamoto University Faculty of Engineering
Committee career (1):
  • 2019/09 - 2019/12 JSAP Kyushu Chapter Annual Meeting 2019 /The 4th Asian Applied Physics Conference (Asian-APC) Chairperson of JSAP Kyushu Chapter Annual Meeting at Kumamoto University
Awards (1):
  • Marubun Research Promotion Foundation Exchange Research Grant
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