Art

J-GLOBAL ID：201602206213841208   Reference number：16A0380130

Novel Wafer-Scale Uniform Layer-by-Layer Etching Technology for Line Edge Roughness Reduction and Surface Flattening of 3D Ge Channels

3D Geチャネルのラインエッジ粗さ低減と表面平坦化のための新しいウエハスケール均一レーヤバイレーヤエッチング技術

Author (8)： MORITA Y. (National Inst. Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  MAEDA T. (National Inst. Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  OTA H. (National Inst. Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  MIZUBAYASHI W. (National Inst. Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  O'UCHI S. (National Inst. Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  MASAHARA M. (National Inst. Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  MATSUKAWA T. (National Inst. Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  ENDO K. (National Inst. Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN)
Material： Technical Digest. International Electron Devices Meeting  (IEEE International Electron Devices Meeting)
Volume： 2015  Page： 390-393  Publication year： 2015 
JST Material Number： C0829B  ISSN： 0163-1918  Document type： Proceedings
Article type： 短報  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： *FET ,  fin (machine element) ,  nanowire ,  surface roughness ,  machining speed ,  Partial Pressure ,  Oxygen ,  Germanium ,  *nanometer process ,  nanotechnology ,  *etching ,  oxyecoia partial pressure
Semi thesaurus term： *FinFET ,  *etch rate ,  nanowire FET ,  line-edge roughness

JST classification (2)： Manufacturing technology of solid-state devices  (NC03030V) ,  Transistors  (NC03070N)

Terms in the title (7)： 3D ,  Ge ,  チャネル ,  ラインエッジ粗さ ,  平坦化 ,  ウエハ ,  スケール