Art

J-GLOBAL ID：201602211524292155   Reference number：16A0139721

化合物半導体光集積デバイスの展望 化合物半導体と異種材料との接合技術

Author (1)： SHIMOMURA KAZUHIKO (上智大 理工)
Material： O plus E  (Optics + Electronics)
Issue： 435  Page： 139-147  Publication year： Jan. 25, 2016 
JST Material Number： Z0994A  ISSN： 0911-5943  Document type： Article
Article type： 解説  Country of issue： Japan (JPN)  Language： JAPANESE (JA)

Thesaurus term： *DH laser ,  *MOCVD ,  silicon ,  indium gallium arsenide ,  indium phosphide ,  compound semiconductor ,  multiple quantum well ,  *semiconductor junction

JST classification (1)： Semiconductor thin films  (BK14040E)

Reference (34)：

• S. Tanaka, S. H. Jeong, S. Sekiguchi, T. Kurahashi, Y. Tanaka, and K. Morito, "High-output-power, single-wavelength silicon hybrid laser using precise flip-chip bonding technology", Opt. Express, Vol. 20, No. 27, 28057, 2012.
• T. Kita, K. Nemoto, and H. Yamada, "Silicon photonic wavelength-tunable laser diode with asymmetric Mach-Zehnder interferometer", IEEE J. Sel. Top. Quantum Electron., Vol. 20, No. 4, 8201806, 2014.
• K. Ohira, K. Kobayashi, N. Iizuka, H. Yoshida, M. Ezaki, H. Uemura, A. Kojima, K. Nakamura, H. Furuyama, and H. Shibata, "On-chip optical interconnection by using integrated III-V laser diode and photodetector with silicon waveguide", Opt. Express, Vol. 18, No. 15, 15440, 2010
• S. Stanković, R. Jones, M. N. Sysak, J. M. Heck, G. Roelkens, and D. V. Thourhout, "1310-nm hybrid III-V/Si Fabry-Pérot laser based on adhesive bonding", IEEE Photon. Technol. Lett., Vol. 23, No. 23, 1781, 2011.
• D. Inoue, J. Lee, K. Doi, T. Hiratani, Y. Atsuji, T. Amemiya, N. Nishiyama, and S. Arai, "Room-temperature continuous-wave operation of GaInAsP/InP lateral-current-injection membrane laser bonded on Si substrate", Appl. Phys. Express, 7, 072701, 2014.

Terms in the title (4)： 化合物半導体 ,  光集積デバイス ,  展望 ,  異種材料