Art

J-GLOBAL ID：201602221076548122   Reference number：16A0106114

Crystal Growth of Anthracene Thin Films on Silicon by Rapid Expansion of Supercritical Solutions (RESS) Using Carbon Dioxide

二酸化炭素を用いた超臨界溶液(RESS)の急速成長によるシリコン上のアントラセン薄膜の結晶成長

Author (2)： FUJII Tatsuya (Dep. of Chemistry and Material Engineering, Fac. of Engineering, Shinshu Univ.) ,  UCHIDA Hirohisa (Dep. of Chemistry and Material Engineering, Fac. of Engineering, Shinshu Univ.)
Material： Journal of Chemical Engineering of Japan  (J Chem Eng Jpn)
Volume： 48  Issue： 9  Page： 787-794 (J-STAGE)  Publication year： 2015 
JST Material Number： S0629A  ISSN： 0021-9592  CODEN： JCEJAQ  Document type： Article
Article type： 原著論文  Country of issue： Japan (JPN)  Language： ENGLISH (EN)

Thesaurus term： *supercritical fluid ,  *carbon dioxide ,  *crystal growth ,  silicon ,  thin film ,  particle morphology ,  polyacene
Semi thesaurus term： 急速成長 ,  急速膨張 ,  粒子形態

JST classification (2)： Crystal growth of organic compounds  (BK13070E) ,  Thin films of organic compounds  (BK14070L)

Substance index (1)： Anthracene

Reference (66)：

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• Buckanie, N. M. and F.-J. Meyer zu Heringdorf; “Photoemission Electron Microscopy Study of Anthracene Growth on Si(111),” Surf. Sci., 601, 1701–1704 (2007)
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Terms in the title (8)： 二酸化炭素 ,  超臨界 ,  溶液 ,  成長 ,  シリコン ,  アントラセン ,  薄膜 ,  結晶成長