Art

J-GLOBAL ID：201602232778338801   Reference number：16A0388185

Growth of Shockley type stacking faults upon forward degradation in 4H-SiC p-i-n diodes

4H-SiC p-i-nダイオードにおける順方向劣化に際してのShockley型積層欠陥の成長

Author (16)： TANAKA Atsushi (Advanced Power Electronics Res. Center, National Inst. of Advanced Industrial Sci. and Technol. (AIST), 16-1 Onogawa ...) ,  MATSUHATA Hirofumi (Advanced Power Electronics Res. Center, National Inst. of Advanced Industrial Sci. and Technol. (AIST), 16-1 Onogawa ...) ,  KAWABATA Naoyuki (Advanced Power Electronics Res. Center, National Inst. of Advanced Industrial Sci. and Technol. (AIST), 16-1 Onogawa ...) ,  MORI Daisuke (Fuji Electric Co., Ltd., 1 Fuji-cho, Hino-city, Tokyo 191-8502, JPN) ,  INOUE Kei (Fuji Electric Co., Ltd., 1 Fuji-cho, Hino-city, Tokyo 191-8502, JPN) ,  RYO Mina (Advanced Power Electronics Res. Center, National Inst. of Advanced Industrial Sci. and Technol. (AIST), 16-1 Onogawa ...) ,  FUJIMOTO Takumi (Advanced Power Electronics Res. Center, National Inst. of Advanced Industrial Sci. and Technol. (AIST), 16-1 Onogawa ...) ,  TAWARA Takeshi (Advanced Power Electronics Res. Center, National Inst. of Advanced Industrial Sci. and Technol. (AIST), 16-1 Onogawa ...) ,  MIYAZATO Masaki (Advanced Power Electronics Res. Center, National Inst. of Advanced Industrial Sci. and Technol. (AIST), 16-1 Onogawa ...) ,  MIYAJIMA Masaaki (Advanced Power Electronics Res. Center, National Inst. of Advanced Industrial Sci. and Technol. (AIST), 16-1 Onogawa ...) ,  FUKUDA Kenji (Advanced Power Electronics Res. Center, National Inst. of Advanced Industrial Sci. and Technol. (AIST), 16-1 Onogawa ...) ,  OHTSUKI Akihiro (Fuji Electric Co., Ltd., 1 Fuji-cho, Hino-city, Tokyo 191-8502, JPN) ,  KATO Tomohisa (Advanced Power Electronics Res. Center, National Inst. of Advanced Industrial Sci. and Technol. (AIST), 16-1 Onogawa ...) ,  TSUCHIDA Hidekazu (Central Res. Inst. of Electric Power Ind. (CRIEPI), 2-6-1 Nagasaka, Yokosuka, Kanagawa 240-0196, JPN) ,  YONEZAWA Yoshiyuki (Advanced Power Electronics Res. Center, National Inst. of Advanced Industrial Sci. and Technol. (AIST), 16-1 Onogawa ...) ,  KIMOTO Tsunenobu (Dep. of Electronic Sci. and Engineering, Kyoto Univ., Katsura, Nishikyo, Kyoto 615-8510, JPN)
Material： Journal of Applied Physics  (Journal of General Physics and its Application to Other Sciences and to Industry)
Volume： 119  Issue： 9  Page： 095711-095711-9  Publication year： Mar. 07, 2016 
JST Material Number： C0266A  ISSN： 0021-8979  CODEN： JAPIAU  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： *silicon carbide ,  *degradation(alteration) ,  *stacking fault ,  X-ray diffraction topography ,  photoluminescence ,  *carrier density ,  *PIN diode
Semi thesaurus term： *4H-SiC

JST classification (2)： Lattice defects in semiconductors  (BK12040Q) ,  Diodes  (NC03050R)

Terms in the title (5)： 4H-SiC ,  ダイオード ,  順 ,  積層欠陥 ,  成長