Matsuhata Hirofumi

マツハタヒロフミ | Matsuhata Hirofumi

Affiliation and department：
Homepage URL (1)： http://www.aist.go.jp/RESEARCHERDB/cgi-bin/worker_detail.cgi?call=namae&rw_id=H66944455

Research field (5)： Electric/electronic material engineering , Crystal engineering , Applied materials , Mathematical physics and basic theory , Semiconductors, optical and atomic physics

Research keywords (1)：回折物理ナノ構造評価半導体機能性化合物結晶学

MISC (23)：

XQ Shen, H Okumura, H Matsuhata. Studies of the annihilation mechanism of threading dislocation in AlN films grown on vicinal sapphire (0001) substrates using transmission electron microscopy. APPLIED PHYSICS LETTERS. 2005. 87. 10. 101910-1-101910-3
Y Yoshida, SI Ikeda, H Matsuhata, N Shirakawa, CH Lee, S Katano. Crystal and magnetic structure of Ca3Ru2O7. PHYSICAL REVIEW B. 2005. 72. 5. 054412-1-054412-7
S Okayama, S Haraichi, H Matsuhata. Reference sample for the evaluation of SEM image resolution at a high magnification-nanometer-scale Au particles on an HOPG substrate. JOURNAL OF ELECTRON MICROSCOPY. 2005. 54. 4. 345-350
XQ Shen, H Matsuhata, H Okumura. Reduction of the threading dislocation density in GaN films grown on vicinal sapphire(0001) substrates. APPLIED PHYSICS LETTERS. 2005. 86. 2. 021912-1-021912-3
GaN/AlN super-lattice structures on vicinal sapphire (0001) substrates grown by rf-MBE. phys. stat. sol. 2005. (c) 2. 7. 2385-2388

ｍore...

Professional career (1)：

工学博士

Association Membership(s) (6)：

日本顕微鏡学会 , 日本物理学会 , 日本結晶学会 , Physical Society of Japan , Japanese Society of Electron Microscopy , Japanese Society of Crystallography

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