Rchr
J-GLOBAL ID：200901022016073344
Update date: Sep. 29, 2022
Katou Tomohisa
カトウ トモヒサ | Katou Tomohisa
Affiliation and department：
National Institute of Advanced Industrial Science and Technology
About National Institute of Advanced Industrial Science and Technology
Search "National Institute of Advanced Industrial Science and Technology"
Homepage URL (1)：
http://www.aist.go.jp/RESEARCHERDB/cgi-bin/worker_detail.cgi?call=namae&rw_id=T08052323
MISC (11)：
Junji Senzaki, Kazutoshi Kojima, Tomohisa Kato, Atsushi Shimozato, Kenji Fukuda. Correlation between reliability of thermal oxides and dislocations in n-type 4H-SiC epitaxial wafers. APPLIED PHYSICS LETTERS. 2006. 89. 2. 022909-
T Kato, S Nishizawa, H Yamaguchi, K Arai. In-situ observation of SiC bulk single crystal growth by XRD system. JOURNAL OF RARE EARTHS. 2006. 24. 2. 49-53
Investigation of in-grown dislocations in 4H-SiC epitaxial layer. MATERIALS SCIENCE FORUM. 2006. 527-529. 147-152
S Nakashima, T Kato, S Nishizawa, T Mitani, H Okumura, T Yamamoto. Deep ultraviolet raman microspectroscopic characterization of polishing-induced surface damage in SiC crystals. JOURNAL OF THE ELECTROCHEMICAL SOCIETY. 2006. 153. 4. G319-G323
Defect Characterization of 4H-SiC Bulk Crystals Grown on Micropipe Filled Seed Crystal. MATERIALS SCIENCE FORUM. 2005. 483-485. 315-318
ｍore...
※ Researcher’s information displayed in J-GLOBAL is based on the information registered in
researchmap
.
For details, see here
.
Return to Previous Page
TOP
BOTTOM
