Art

J-GLOBAL ID：201602247699397623   Reference number：16A1227142

An Application of Laser Annealing Process in Low-Voltage Power MOSFETs

低電圧電力MOSFETにおけるレーザアニーリングプロセスの応用

Author (3)： CHEN Yi (University of the Ryukyus) ,  OKADA Tatsuya (University of the Ryukyus) ,  NOGUCHI Takashi (University of the Ryukyus)
Material： IEICE Transactions on Electronics (Web)  (IEICE Trans Electron (Web))
Volume： E99.C  Issue： 5  Page： 516-521(J-STAGE)  Publication year： 2016 
JST Material Number： U0468A  ISSN： 1745-1353  Document type： Article
Article type： 原著論文  Country of issue： Japan (JPN)  Language： ENGLISH (EN)

Thesaurus term： *MOSFET ,  *power transistor ,  semiconductor junction ,  semiconductor device ,  semiconductor process ,  *laser annealing ,  visible laser ,  green ,  pulsed laser irradiation
Semi thesaurus term： *laser annealing ,  shallow junction ,  *power MOSFET ,  semiconductor process ,  green laser

Author keywords (4)： power MOSFETs ,  laser annealing ,  shallow junction ,  electrical characteristics

JST classification (2)： Manufacturing technology of solid-state devices  (NC03030V) ,  Transistors  (NC03070N)

Reference (17)：

• [1] B.J. Baliga, “Vertical Field Effect Transistors having improved Breakdown Voltage Capability and Low On-state Resistance,” U.S. Patent # 5,637,898, Issued June 10, 1997.
• [2] L. Lorenz, G. Deboy, A. Knapp, and M. Marz, “COOLMOS-A New Milestone in High Voltage Power MOS,” IEEE International Symposium on Power Semiconductor Devices and ICs, pp.3-10, 1999.
• [3] B.J. Baliga, Fundamentals of Power Semiconductor Devices (Springer, 2008).
• [4] C. Ortolland, et al, “Optimized ultra-low thermal budget process flow for advanced High-K/Metal gate first CMOS using laser-annealing technology,” VLSI Technology, 2009 Symposium on, pp.38-39, 2009
• [5] T. Noguchi, T. Nishinohara, J.D. Mugiraneza, K. Shirai, T. Okada, and T. Itoh, “Crystallization of amorphous silicon films on flexible glass by Blue-Multi-Diode-Laser Anealing as a new LTPS,” SID Symposium Digest of Technical Papers, vol.43, no.1, pp.1129-1132, 2012.

Terms in the title (5)： 低電圧 ,  電力MOSFET ,  レーザアニーリング ,  プロセス ,  応用