Art

J-GLOBAL ID：201602289805861238   Reference number：16A0409646

高効率加工を目指す革新的プラズマ融合CMP技術と難加工材料への適用

Author (2)： DOI TOSHIRO (九大 産学連携セ) ,  AIDA HIDEO (九大 産学連携セ)
Material： 光技術コンタクト  (Optical and Electro-Optical Engineering Contact)
Volume： 54  Issue： 4  Page： 35-42  Publication year： Apr. 20, 2016 
JST Material Number： S0624A  ISSN： 0913-7289  Document type： Article
Article type： 解説  Country of issue： Japan (JPN)  Language： JAPANESE (JA)

Thesaurus term： *chemical mechanical polishing ,  *plasma ,  material ,  efficiency ,  *plasma arc machining ,  silicon carbide ,  gallium nitride ,  Diamond ,  hexagonal system ,  substrate (plate) ,  flatness (property) ,  quality ,  precision machining ,  machining efficiency ,  *processing resistant material ,  high quality ,  *machining ,  ore ,  precious stone
Semi thesaurus term： 4H-SiC ,  high efficiency ,  high quality

JST classification (1)： Applications of plasma  (BJ02110K)

Reference (7)：

• Novel CMP/PCVM Combined Processing of Hard-to Process Crystals Based on Innovative Concepts, T.K.Doi, Y.Sano, S.Kurokawa, Hideo Aida et.al, Sensors & Materials, 26, 6 (2014) 403-415
• Formation and Evaluation of Quasi-radical Site Induced by Femtosecond Laser on the Surface of Diamond, Chengwu WANG, Syuhei KUROKAWA, Shin-ichi KOMAI, Hideo AIDA, Koki OYAMA, Kunimitsu TAKAHASHI, Yasuhisa SANO, Keiichi TSUKAMOTO, and Toshiro DOI, Proceedings of the 13th International Symposium on Aerospace Technology, pp.49-51, 17-18 October 2013, Namiltte Resort Elinus Hotel (Sacheon, Korea)
• Consideration of Femtosecond Laser-induced Effect on Semiconductor Material SiC Substrate for CMP Processing, Chengwu WANG, Syuhei KUROKAWA, Toshiro DOI, Yasuhisa SANO, Hideo AIDA, Osamu OHNISHI, Michio UNEDA, Koki OYAMA, Terutake HAYASHI, Ji ZHANG, Asakawa EIJI, Applied Mechanics and Materials, Vols. 799-800, pp.458-462, (2015-10)
• Dependence of GaN Removal Rate of Plasma Chemical Vaporization Machining on Mechanically Introduced Damage,Yasuhisa Sano, Toshiro K. Doi, Syuhei Kurokawa, Hideo Aida, Osamu Ohnishi, Michio Uneda, Kousuke Shiozawa, Yu Okada, and Kazuto Yamauchi Sensors and Materials, 26 (6) (2014) 429-434.
• GaN Substrate for Post-Silicon Power Devices -Surface and Subsurface Damage Evaluation for GaN Substrate Prepared by Chemical Mechanical Polishing-, Koji KOYAMA, Hideo AIDA, Junya NAKATA, Takuhiro SUGIYAMA, Aki TOSAKA, Yukichi SHIGETA, Hidetoshi TAKEDA, Natsuko AOTA, Toshiro DOI, Tsutomu YAMAZAKI, Proc. Int. Symp. Adv. Sci. Tech. Silicon Mater. (JSPS Si Symposium), Kona, Hawaii, pp.87-90 (2012).

Terms in the title (5)： 高効率加工 ,  プラズマ ,  融合 ,  CMP ,  難加工材料