Art

J-GLOBAL ID：201702214930722481   Reference number：17A1465161

Electrical properties and B depth profiles of in-situ B doped Si films grown by ECR Ar plasma CVD without substrate heating

基板加熱無しでのECR ArプラズマCVDにより成長させたその場BドープしたSi膜の電気的性質とBの深さプロファイル【Powered by NICT】

Author (6)： Motegi Koya (Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan) ,  Ueno Naofumi (Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan) ,  Sakuraba Masao (Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan) ,  Osakabe Yoshihiro (Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan) ,  Akima Hisanao (Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan) ,  Sato Shigeo (Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan)
Material： Materials Science in Semiconductor Processing  (Mater Sci Semicond Process)
Volume： 70  Page： 50-54  Publication year： 2017 
JST Material Number： W1055A  ISSN： 1369-8001  Document type： Article
Article type： 原著論文  Country of issue： United Kingdom (GBR)  Language： ENGLISH (EN)

Abstract/Point： In-situ B doping in epitaxial ...

Register(free) or Log In to access     To see more with JDream III (charged).   {{ this.onShowAbsJLink("http://jdream3.com/lp/jglobal/index.html?docNo=17A1465161&from=J-GLOBAL&jstjournalNo=W1055A") }}

Thesaurus term： *electrical property ,  *silicon ,  buffer layer ,  carrier density ,  *depth profile ,  *plasma CVD ,  segregation (concentration distribution) ,  junction diode ,  epitaxy ,  substrate (biochemistry) ,  *doping ,  rectification (electric) ,  amorphous silicon ,  Hall mobility
Semi thesaurus term： 電子サイクロトロン共鳴 , 【Automatic Indexing@JST】

Author keywords (5)： Plasma chemical vapor deposition ,  Epitaxial growth: silicon ,  In-situ boron doping ,  pn junction diode ,  Depth profile

JST classification (2)： Materials of solid-state devices  (NC03020K) ,  Semiconductor thin films  (BK14040E)

Terms in the title (7)： Ar ,  プラズマCVD ,  成長 ,  ドープ ,  Si膜 ,  電気的性質 ,  深さプロファイル