Art

J-GLOBAL ID：201702217425149582   Reference number：17A0993073

Thermodynamic analysis of vapor-phase epitaxy of CdTe using a metallic Cd source

金属Cd源を用いたCdTeの気相エピタクシーの熱力学的解析【Powered by NICT】

Author (4)： Iso Kenji (Department of Applied Chemistry, Graduate School of Engineering, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan) ,  Iso Kenji (R&TD Center, Tsukuba Plant, LED Materials Department, Mitsubishi Chemical Corporation, Ushiku, Ibaraki 300-1295, Japan) ,  Murakami Hisashi (Department of Applied Chemistry, Graduate School of Engineering, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan) ,  Koukitu Akinori (Department of Applied Chemistry, Graduate School of Engineering, Tokyo University of Agriculture and Technology, Koganei, Tokyo 184-8588, Japan)
Material： Journal of Crystal Growth  (J Cryst Growth)
Volume： 470  Page： 122-127  Publication year： 2017 
JST Material Number： B0942A  ISSN： 0022-0248  Document type： Article
Article type： 原著論文  Country of issue： Netherlands (NLD)  Language： ENGLISH (EN)

Abstract/Point： Thermodynamic analysis of CdTe...

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Thesaurus term： *Thermodynamics ,  precursor (substance) ,  *Cadmium ,  vapor deposition ,  *cadmium telluride ,  equilibrium state ,  driving force ,  *vapor phase growth ,  source of pollution ,  growing temperature ,  cost effective

Author keywords (4)： A1. Thermodynamic properties ,  A3. Vapor phase epitaxy ,  B1. Cadmium compounds ,  B2. Semiconducting II-VI materials

JST classification (1)： Semiconductor thin films  (BK14040E)

Terms in the title (4)： Cd ,  CdTe ,  気相エピタクシー ,  力学的解析