Hikari Suzuki, Rie Togashi, Hisashi Murakami, Yoshinao Kumagai, Akinori Koukitu. Ab initio calculation for an initial growth process of GaN on (0001) and (000(1)over-bar) surfaces by vapor phase epitaxy. PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, SUPPL 2. 2009. 6. S2. S301-S304
High temperature growth of thick InGaN layer with the indium solid composition of 10% using tri-halide vapor phase epitaxy
(International Conference on LEDs and their Industrial Applications ’17 (LEDIA'17) 2017)
Temperature dependence of In2O3 growth on (0001) sapphire by HVPE
(International Conference on LEDs and their Industrial Applications ’17 (LEDIA'17) 2017)
パワーデバイスに向けたGa2O3ウエハプロセス技術
(第64回応用物理学会学術講演会 2017)
Mg Ion Implantation Technology for Vertical Ga2O3 Power Devices
(第64回応用物理学会学術講演会 2017)