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J-GLOBAL ID：201702221267844099   Reference number：17A1421088

Fabrication of BaSi₂ thin films capped with amorphous Si using a single evaporation source

単一蒸発源を用いた非晶質SiでキャップされたBaSi_2薄膜の作製【Powered by NICT】

Author (7)： Hara Kosuke O. (Center for Crystal Science and Technology, University of Yamanashi, 7-32 Miyamae, Kofu, Yamanashi 400-8511, Japan) ,  Trinh Cham Thi (Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan) ,  Kurokawa Yasuyoshi (Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan) ,  Arimoto Keisuke (Center for Crystal Science and Technology, University of Yamanashi, 7-32 Miyamae, Kofu, Yamanashi 400-8511, Japan) ,  Yamanaka Junji (Center for Crystal Science and Technology, University of Yamanashi, 7-32 Miyamae, Kofu, Yamanashi 400-8511, Japan) ,  Nakagawa Kiyokazu (Center for Crystal Science and Technology, University of Yamanashi, 7-32 Miyamae, Kofu, Yamanashi 400-8511, Japan) ,  Usami Noritaka (Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan)
Material： Thin Solid Films
Volume： 636  Page： 546-551  Publication year： 2017 
JST Material Number： B0899A  ISSN： 0040-6090  Document type： Article
Article type： 原著論文  Country of issue： Netherlands (NLD)  Language： ENGLISH (EN)

Abstract/Point： The capping of a BaSi<sub>2</s...

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Thesaurus term： *thin film ,  silicide ,  X-ray spectroscopy ,  *evaporation ,  carbonate ,  microwave ,  *silicon ,  lamellar structure ,  solar cell ,  X-ray photoelectron spectrum ,  photoconductivity ,  X-ray photoelectron spectroscopy ,  *amorphous silicon ,  energy dissipation ,  carrier lifetime ,  *Barium

Author keywords (5)： Barium silicide ,  Silicide semiconductor ,  Amorphous silicon ,  Surface capping ,  Thermal evaporation

JST classification (1)： Semiconductor thin films  (BK14040E)

Terms in the title (5)： 蒸発源 ,  非晶質Si ,  キャップ ,  薄膜 ,  作製