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J-GLOBAL ID：201702227230414616   Reference number：17A0470979

Growth of Cu₂GeS₃ bulk single crystals by chemical vapor transport with iodine

とよう素化学気相輸送によるCu_2GeS_3バルク単結晶の成長【Powered by NICT】

Author (4)： Matsumoto Yusuke (Department of Electrical, Electronics and Information Engineering, Nagaoka University of Technology, 1603-1, Kamitomioka, Nagaoka, Niigata 940-2188, Japan) ,  Aihara Naoya (Department of Electrical, Electronics and Information Engineering, Nagaoka University of Technology, 1603-1, Kamitomioka, Nagaoka, Niigata 940-2188, Japan) ,  Saito Nobuo (Department of Materials Science and Technology, Nagaoka University of Technology, 1603-1, Kamitomioka, Nagaoka, Niigata 940-2188, Japan) ,  Tanaka Kunihiko (Department of Electrical, Electronics and Information Engineering, Nagaoka University of Technology, 1603-1, Kamitomioka, Nagaoka, Niigata 940-2188, Japan)
Material： Materials Letters  (Mater Lett)
Volume： 194  Page： 16-19  Publication year： 2017 
JST Material Number： E0935A  ISSN： 0167-577X  Document type： Article
Article type： 原著論文  Country of issue： Netherlands (NLD)  Language： ENGLISH (EN)

Abstract/Point： Bulk crystals of Cu<sub>2</sub...

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Thesaurus term： Raman spectrum ,  *gas phase ,  monoclinic system ,  iodine ,  preferred orientation ,  *single crystal ,  X-Ray Diffraction ,  flake ,  *crystal ,  *iodination ,  selected-area electron diffraction ,  bulk crystal ,  film solar cell ,  *single crystal growth

Author keywords (3)： Cu₂GeS₃ ,  Chemical vapor transport ,  Single crystal

JST classification (3)： Carbon and its compounds  (YB02060D) ,  Bases,metal oxides  (CD01030Z) ,  Manufacturing of ceramics and ceramic whiteware  (YC03020V)

Terms in the title (5)： よう素化 ,  気相 ,  輸送 ,  バルク ,  単結晶の成長