Art

J-GLOBAL ID：201702245598570000   Reference number：17A1358105

Highly bendable transparent electrode using mesh patterned indium tin oxide for flexible electronic devices

フレキシブル電子デバイスのためのメッシュパターン形成したインジウムすず酸化物を用いた高屈曲性透明電極【Powered by NICT】

Author (6)： Sakamoto Kosuke (Faculty of Science and Engineering, Waseda University, Tokyo, Japan) ,  Kuwae Hiroyuki (Faculty of Science and Engineering, Waseda University, Tokyo, Japan) ,  Kobayashi Naofumi (Faculty of Science and Engineering, Waseda University, Tokyo, Japan) ,  Nobori Atsuki (Faculty of Science and Engineering, Waseda University, Tokyo, Japan) ,  Shoji Shuichi (Faculty of Science and Engineering, Waseda University, Tokyo, Japan) ,  Mizuno Jun (Research Organization for Nano & Life Innovation, Waseda University, Japan)
Material： IEEE Conference Proceedings  (IEEE Conf Proc)
Volume： 2017  Issue： NEMS  Page： 323-326  Publication year： 2017 
JST Material Number： W2441A  Document type： Proceedings
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Abstract/Point： We developed a highly bendable...

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Thesaurus term： *Indium ,  flexibility ,  light emission ,  photolithography ,  *tin oxide ,  bending test (bending) ,  crack ,  wet etching ,  tensile stress ,  *pattern formation ,  polyethylene terephthalate ,  *transference electrode ,  electroluminescence ,  *electron device ,  aromatic polyester
Semi thesaurus term： ITO電極 , 【Automatic Indexing@JST】

JST classification (3)： Electrochemical reaction  (CB07050F) ,  Thin films of organic compounds  (BK14070L) ,  Light emitting devices  (NC03082G)

Terms in the title (6)： 電子デバイス ,  メッシュ ,  パターン形成 ,  インジウムすず酸化物 ,  屈曲性 ,  透明電極