Art

J-GLOBAL ID：201702246617406480   Reference number：17A1080104

Pressure-induced topological phase transition in the polar semiconductor BiTeBr

極性半導体BiTeBrにおける圧力誘起相転移

Author (10)： OHMURA Ayako (Niigata Univ., Niigata, JPN) ,  HIGUCHI Yuichiro (Niigata Univ., Niigata, JPN) ,  OCHIAI Takayuki (Niigata Univ., Niigata, JPN) ,  KANOU Manabu (Tokyo Inst. Technol., Kanagawa, JPN) ,  ISHIKAWA Fumihiro (Niigata Univ., Niigata, JPN) ,  NAKANO Satoshi (National Inst. Materials Sci. (NIMS), Ibaraki, JPN) ,  NAKAYAMA Atsuko (Niigata Univ., Niigata, JPN) ,  NAKAYAMA Atsuko (Iwate Univ., Morioka, JPN) ,  YAMADA Yuh (Niigata Univ., Niigata, JPN) ,  SASAGAWA Takao (Tokyo Inst. Technol., Kanagawa, JPN)
Material： Physical Review. B  (Physical Review. B. Covering Condensed Matter and Materials Physics)
Volume： 95  Issue： 12  Page： 125203.1-125203.7  Publication year： Mar. 2017 
JST Material Number： D0746A  ISSN： 2469-9950  CODEN： PRBMDO  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Thesaurus term： *semiconductor ,  *telluride (chalcogenide) ,  *bismuth compound ,  *bromide ,  *phase transition ,  electrical resistivity ,  band structure ,  *polar semiconductor ,  bismuth telluride ,  pressure induced phase transition

JST classification (2)： Crystal growth of semiconductors  (BK13040X) ,  Phase transitions and critical phenomena in general  (BL04010V)

Terms in the title (2)： 極性半導体 ,  圧力誘起相転移