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J-GLOBAL ID：201702272778947671   Reference number：17A0470077

Mechanism of gate dielectric degradation by hydrogen migration from the cathode interface

陰極界面からの水素移動によるゲート誘電体劣化の機構【Powered by NICT】

Author (12)： Higashi Yusuke (Corporate R&D Center, Toshiba Corporation, 1, Komukai Toshiba-cho, Saiwai-Ku, Kawasaki 212-8582, Japan) ,  Higashi Yusuke (Institute of Applied Physics, University of Tsukuba, Ibaraki 305-8573, Japan) ,  Takaishi Riichiro (Corporate R&D Center, Toshiba Corporation, 1, Komukai Toshiba-cho, Saiwai-Ku, Kawasaki 212-8582, Japan) ,  Kato Koichi (Institute of Industrial Science, University of Tokyo, 4-6-1, Komaba, Meguro-Ku, Tokyo 153-8505, Japan) ,  Suzuki Masamichi (Corporate R&D Center, Toshiba Corporation, 1, Komukai Toshiba-cho, Saiwai-Ku, Kawasaki 212-8582, Japan) ,  Nakasaki Yasushi (Corporate R&D Center, Toshiba Corporation, 1, Komukai Toshiba-cho, Saiwai-Ku, Kawasaki 212-8582, Japan) ,  Tomita Mitsuhiro (Corporate R&D Center, Toshiba Corporation, 1, Komukai Toshiba-cho, Saiwai-Ku, Kawasaki 212-8582, Japan) ,  Mitani Yuichiro (Corporate R&D Center, Toshiba Corporation, 1, Komukai Toshiba-cho, Saiwai-Ku, Kawasaki 212-8582, Japan) ,  Matsumoto Masuaki (Institute of Industrial Science, University of Tokyo, 4-6-1, Komaba, Meguro-Ku, Tokyo 153-8505, Japan) ,  Ogura Shohei (Institute of Industrial Science, University of Tokyo, 4-6-1, Komaba, Meguro-Ku, Tokyo 153-8505, Japan) ,  Fukutani Katsuyuki (Institute of Industrial Science, University of Tokyo, 4-6-1, Komaba, Meguro-Ku, Tokyo 153-8505, Japan) ,  Yamabe Kikuo (Institute of Applied Physics, University of Tsukuba, Ibaraki 305-8573, Japan)
Material： Microelectronics Reliability  (Microelectronics and Reliability)
Volume： 70  Page： 12-21  Publication year： 2017 
JST Material Number： C0530A  ISSN： 0026-2714  Document type： Article
Article type： 原著論文  Country of issue： United Kingdom (GBR)  Language： ENGLISH (EN)

Abstract/Point： Hydrogen migration in a SiO<su...

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Thesaurus term： *hydride transfer ,  defect level ,  *Hydrogen ,  nuclear reaction analysis ,  energy distribution ,  *interface (surface) ,  *dielectrics ,  *gate dielectric film ,  ab initio calculation ,  oxygen vacancy
Semi thesaurus term： SILC , 【Automatic Indexing@JST】

Author keywords (5)： Nuclear reaction analysis (NRA) ,  Dielectric degradation ,  Hydrogen ,  Stress-induced leakage current (SILC) ,  First-principles calculations

JST classification (2)： Measurement,testing and reliability of solid-state devices  (NC03040G) ,  Transistors  (NC03070N)

Terms in the title (4)： 陰極 ,  界面 ,  水素移動 ,  ゲート誘電体