Art

J-GLOBAL ID：201702275047785299   Reference number：17A1181751

Impact of residual defects caused by extension ion implantation in FinFETs on parasitic resistance and its fluctuation

寄生抵抗とその変動に及ぼすFinFETにおける拡張イオン注入により生じた残留欠陥の影響【Powered by NICT】

Author (9)： Matsukawa Takashi (National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan) ,  Liu Yongxun (National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan) ,  Mori Takahiro (National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan) ,  Morita Yukinori (National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan) ,  Otsuka Shintaro (National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan) ,  O'uchi Shin-ichi (National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan) ,  Fuketa Hiroshi (National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan) ,  Migita Shinji (National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan) ,  Masahara Meishoku (National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan)
Material： Solid-State Electronics  (Solid-State Electron)
Volume： 132  Page： 103-108  Publication year： 2017 
JST Material Number： H0225A  ISSN： 0038-1101  Document type： Article
Article type： 原著論文  Country of issue： United Kingdom (GBR)  Language： ENGLISH (EN)

Abstract/Point： The influence of extension dop...

Register(free) or Log In to access     To see more with JDream III (charged).   {{ this.onShowAbsJLink("http://jdream3.com/lp/jglobal/index.html?docNo=17A1181751&from=J-GLOBAL&jstjournalNo=H0225A") }}

Thesaurus term： median value ,  annealing (heat treatment) ,  electrical property ,  transmission electron microscope ,  doping ,  arsenic ,  crystallinity ,  fin (machine element) ,  donor ,  *ion implantation ,  dopant ,  lattice defect
Semi thesaurus term： *FinFET ,  *寄生抵抗 , 【Automatic Indexing@JST】

Author keywords (5)： FinFET ,  Ion implantation ,  Parasitic resistance ,  Variability ,  Crystal defects

JST classification (2)： Transistors  (NC03070N) ,  Manufacturing technology of solid-state devices  (NC03030V)

Terms in the title (6)： 寄生抵抗 ,  FinFET ,  拡張 ,  イオン注入 ,  残留 ,  欠陥