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J-GLOBAL ID：201702275287881525   Reference number：17A0826639

Compact Modeling of Dynamic MOSFET Degradation Due to Hot-Electrons

ホットエレクトロンによる動的MOSFETの劣化のコンパクトモデリング【Powered by NICT】

Author (8)： Tanoue H. (Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashi-Hiroshima, Japan) ,  Tanaka A. (Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashi-Hiroshima, Japan) ,  Oodate Y. (Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashi-Hiroshima, Japan) ,  Nakahagi T. (Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashi-Hiroshima, Japan) ,  Sugiyama D. (Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashi-Hiroshima, Japan) ,  Ma C. (Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashi-Hiroshima, Japan) ,  Mattausch H. J. (Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashi-Hiroshima, Japan) ,  Miura-Mattausch M. (Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashi-Hiroshima, Japan)
Material： IEEE Transactions on Device and Materials Reliability  (IEEE Trans Device Mater Reliab)
Volume： 17  Issue： 1  Page： 52-58  Publication year： 2017 
JST Material Number： W1320A  ISSN： 1530-4388  CODEN： ITDMA2  Document type： Article
Article type： 原著論文  Country of issue： United States (USA)  Language： ENGLISH (EN)

Abstract/Point： A trap-density-based compact m...

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Thesaurus term： simulation ,  Poisson equation ,  oxide ,  current-voltage characteristic ,  *hot electron ,  semiconductor ,  1/f noise ,  *MOSFET ,  model ,  carrier capture ,  *modeling ,  trap density
Semi thesaurus term： 閾値電圧シフト ,  モデルパラメータ ,  *コンパクトモデリング , 【Automatic Indexing@JST】

JST classification (2)： Transistors  (NC03070N) ,  Measurement,testing and reliability of solid-state devices  (NC03040G)

Terms in the title (3)： ホットエレクトロン ,  MOSFET ,  コンパクトモデリング