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J-GLOBAL ID：201702277761798636   Reference number：17A1125329

Potential changes and chemical bonding features for Si-MOS structure as evaluated from HAXPES analysis

HAXPES解析から評価したSi-MOS構造のための潜在的変化と化学結合の特徴【Powered by NICT】

Author (7)： Ohta Akio (Graduate School of Engineering, Nagoya University, Furo-cho Chikusa-ku, Nagoya, Aichi 464-8603, Japan) ,  Ohta Akio (Institute for Advanced Research, Nagoya University, Furo-cho, Chikusa-ku, Nagoya, Aichi 464-8601, Japan) ,  Murakami Hideki (National Institute of Technology, Kurume College, 1-1-1, Komorino, Kurume, Fukuoka 830-8555, Japan) ,  Ikeda Mitsuhisa (Graduate School of Engineering, Nagoya University, Furo-cho Chikusa-ku, Nagoya, Aichi 464-8603, Japan) ,  Makihara Katsunori (Graduate School of Engineering, Nagoya University, Furo-cho Chikusa-ku, Nagoya, Aichi 464-8603, Japan) ,  Ikenaga Eiji (Japan Synchrotron Radiation Research Institute, 1-1-1, Kouto, Sayo-cho, Sayo-gun, Hyogo 679-5148, Japan) ,  Miyazaki Seiichi (Graduate School of Engineering, Nagoya University, Furo-cho Chikusa-ku, Nagoya, Aichi 464-8603, Japan)
Material： Microelectronic Engineering  (Microelectron Eng)
Volume： 178  Page： 80-84  Publication year： 2017 
JST Material Number： C0406B  ISSN： 0167-9317  CODEN： MIENEF  Document type： Article
Article type： 原著論文  Country of issue： Netherlands (NLD)  Language： ENGLISH (EN)

Abstract/Point： An Au/SiO₂/Si MOS s...

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Thesaurus term： photoemission ,  *MOS structure ,  impurity concentration ,  thermal oxidation ,  spectroscopy ,  electric potential ,  bias ,  electric potential distribution ,  Gold ,  *chemical bond ,  hard X-ray ,  Si wafer ,  applied voltage ,  Silicon(100) ,  *hard X-ray photoelectron spectroscopy

Author keywords (4)： Hard X-ray photo-emission spectroscopy (HAXPES) ,  MOS structure ,  Chemical bonding features ,  Potential distribution

JST classification (2)： Metal-insulator-semiconductor structures  (BM03085X) ,  Materials of solid-state devices  (NC03020K)

Terms in the title (6)： HAXPES ,  解析 ,  評価 ,  Si ,  MOS構造 ,  化学結合