Art

J-GLOBAL ID：201702279302029449   Reference number：17A1830817

Characteristics of N₂ and O₂ Plasma-Induced Damages on AlGaN Thin Film Surfaces

AlGaN薄膜表面上のN_2とO_2プラズマ誘起損傷の特性【Powered by NICT】

Author (6)： Kawakami Retsuo (Graduate School of Technology, Industrial and Social Sciences, Tokushima University, Tokushima 770-8506, Japan) ,  Niibe Masahito (Laboratory of Advanced Science and Technology for Industry, University of Hyogo, Kamigori, Hyogo 678-1205, Japan) ,  Nakano Yoshitaka (Chubu University, Kasugai, Aichi 487-8501, Japan) ,  Tanaka Ryo (Laboratory of Advanced Science and Technology for Industry, University of Hyogo, Kamigori, Hyogo 678-1205, Japan) ,  Azuma Chisato (Graduate School of Technology, Industrial and Social Sciences, Tokushima University, Tokushima 770-8506, Japan) ,  Mukai Takashi (Nichia Corporation, Anan, Tokushima 774-0044, Japan)
Material： Physica Status Solidi. A. Applications and Materials Science  (Physica Status Solidi. A.)
Volume： 214  Issue： 11  Page： ROMBUNNO.201700393  Publication year： 2017 
JST Material Number： D0774A  ISSN： 1862-6300  CODEN： PSSABA  Document type： Article
Article type： 原著論文  Country of issue： Germany, Federal Republic of (DEU)  Language： ENGLISH (EN)

Abstract/Point： A fundamental understanding of...

Register(free) or Log In to access     To see more with JDream III (charged).   {{ this.onShowAbsJLink("http://jdream3.com/lp/jglobal/index.html?docNo=17A1830817&from=J-GLOBAL&jstjournalNo=D0774A") }}

Thesaurus term： oxide ,  dislocation density ,  near ultraviolet radiation ,  electrical characteristic ,  plasma exposure ,  *plasma ,  photon ,  *thin film ,  Aluminum ,  etch pit ,  band gap energy ,  *aluminum gallium nitride ,  Aluminum Gallium Nitride/Gallium Nitride
Semi thesaurus term： 高エネルギー ,  照射時間 ,  AlGaN/GaN , 【Automatic Indexing@JST】

Author keywords (5)： AlGaN thin films ,  N2 plasma irradiation ,  O2 plasma irradiation ,  plasma-induced damage ,  surface composition

JST classification (3)： Manufacturing technology of solid-state devices  (NC03030V) ,  Transistors  (NC03070N) ,  Light emitting devices  (NC03082G)

Terms in the title (5)： AlGaN ,  薄膜 ,  プラズマ ,  誘起 ,  損傷