Art

J-GLOBAL ID：201702279448425816   Reference number：17A1223491

Introduction of SiGe/Si heterojunction into novel multilayer tunnel FinFET

新しい多層トンネルFinFETへのSiGe/Siヘテロ接合の導入

Author (11)： MORITA Yukinori (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  FUKUDA Koichi (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  MORI Takahiro (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  MIZUBAYASHI Wataru (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  MIGITA Shinji (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  ENDO Kazuhiko (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  O'UCHI Shin-ichi (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  LIU Yongxun (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  MASAHARA Meishoku (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  MATSUKAWA Takashi (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN) ,  OTA Hiroyuki (National Inst. of Advanced Industrial Sci. and Technol. (AIST), Ibaraki, JPN)
Material： Japanese Journal of Applied Physics  (JJAP)
Volume： 55  Issue： 4S  Page： 04EB06.1-04EB06.5  Publication year： Apr. 2016 
JST Material Number： G0520B  ISSN： 0021-4922  CODEN： JJAPB6  Document type： Article
Article type： 原著論文  Country of issue： United Kingdom (GBR)  Language： ENGLISH (EN)

Thesaurus term： *FET ,  multistory structure ,  semiconductor material ,  silicon ,  device structure ,  demonstration experiment ,  electric current ,  epitaxy ,  hetero-structure
Semi thesaurus term： *FinFET ,  SiGe ,  drain current ,  *tunnel FET

JST classification (1)： Transistors  (NC03070N)

Reference (37)：

• A. M. Ionescu and H. Riel, Nature 479, 329 (2011).
• A. M. Ionescu, L. De Michielis, N. Dagtekin, G. Salvatore, C. Ji, A. Rusu, and S. Bartsch, IEDM Tech. Dig., 2011, 16.1.1.
• A. C. Seabaugh and Z. Qin, Proc. JEFF, 98, 2095 (2010).
• H. Fuketa, K. Yoshioka, K. Fukuda, T. Mori, H. Ota, M. Talcamiya, and T. Sakurai, Ext. Abstr. Solid State Devices and Materials, 2014, p. 832.
• Y. Morita, T. Mori, S. Migita, W. Mizubayashi, K. Fukuda, T. Matsukawa, K. Endo, S. O'uchi, Y. X. Liu, M. Masahara, and H. Ota, IEDM Tech. Dig., 2014, p. 243.

Terms in the title (6)： 多層 ,  トンネル ,  FinFET ,  SiGe ,  Si ,  ヘテロ接合