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J-GLOBAL ID：201702283667049287   Reference number：17A1465186

Silicon-Carbon alloy film formation on Si(100) using SiH₄ and CH₄ reaction under low-energy ECR Ar plasma irradiation

低エネルギーE CRArプラズマ照射下でのSiH_4とCH_4反応を用いたSi(100)上のけい素-炭素合金膜の形成【Powered by NICT】

Author (4)： Sasaki Shogo (Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan) ,  Sakuraba Masao (Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan) ,  Akima Hisanao (Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan) ,  Sato Shigeo (Laboratory for Nanoelectronics and Spintronics, Research Institute of Electrical Communication, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan)
Material： Materials Science in Semiconductor Processing  (Mater Sci Semicond Process)
Volume： 70  Page： 188-192  Publication year： 2017 
JST Material Number： W1055A  ISSN： 1369-8001  Document type： Article
Article type： 原著論文  Country of issue： United Kingdom (GBR)  Language： ENGLISH (EN)

Abstract/Point： Epitaxial growth of Si-C alloy...

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Thesaurus term： *Argon ,  lattice match ,  *alloy ,  surface reaction ,  *plasma exposure ,  plasma CVD ,  lattice constant ,  epitaxy ,  crystal quality ,  tensile strain ,  *low energy
Semi thesaurus term： 電子サイクロトロン共鳴 , 【Automatic Indexing@JST】

Author keywords (6)： Plasma chemical vapor deposition ,  Heteroepitaxial growth ,  Silicon ,  Silicon-Carbon alloy ,  X-ray diffraction ,  Reciprocal space map

JST classification (2)： Semiconductor thin films  (BK14040E) ,  Materials of solid-state devices  (NC03020K)

Terms in the title (6)： 低エネルギー ,  プラズマ照射 ,  Si ,  けい素 ,  炭素 ,  合金