Art

J-GLOBAL ID：201702291880553686   Reference number：17A1465163

Effects of temperature and pressure in oxynitridation kinetics on Si(100) with N₂O gas

N_2OガスによるSi(100)上の酸窒化反応速度論における温度と圧力の影響【Powered by NICT】

Author (4)： Enta Yoshiharu (Graduate School of Science and Technology, Hirosaki University, 3 Bunkyo-cho, Hirosaki 036-8561, Japan) ,  Wada Makoto (Graduate School of Science and Technology, Hirosaki University, 3 Bunkyo-cho, Hirosaki 036-8561, Japan) ,  Arita Mariko (Graduate School of Science and Technology, Hirosaki University, 3 Bunkyo-cho, Hirosaki 036-8561, Japan) ,  Takami Takahiro (Graduate School of Science and Technology, Hirosaki University, 3 Bunkyo-cho, Hirosaki 036-8561, Japan)
Material： Materials Science in Semiconductor Processing  (Mater Sci Semicond Process)
Volume： 70  Page： 63-67  Publication year： 2017 
JST Material Number： W1055A  ISSN： 1369-8001  Document type： Article
Article type： 原著論文  Country of issue： United Kingdom (GBR)  Language： ENGLISH (EN)

Abstract/Point： We have investigated oxynitrid...

Register(free) or Log In to access     To see more with JDream III (charged).   {{ this.onShowAbsJLink("http://jdream3.com/lp/jglobal/index.html?docNo=17A1465163&from=J-GLOBAL&jstjournalNo=W1055A") }}

Thesaurus term： etching ,  X-ray photoelectron spectroscopy ,  *nitriding ,  substrate temperature ,  ion beam sputtering ,  dinitrogen oxide ,  nitrided layer ,  *reaction kinetics ,  oxidation ,  growth rate ,  scanning electron microscope ,  surface morphology ,  oxynitride ,  *acid nitride ,  *Silicon(100) ,  *modification

Author keywords (6)： Silicon oxynitride ,  Nitrous oxide ,  Oxynitridation ,  Photoelectron spectroscopy ,  Reaction kinetics ,  Si(100)

JST classification (1)： Materials of solid-state devices  (NC03020K)

Terms in the title (3)： Si ,  酸窒化 ,  反応速度論