N.Matsuo, A. Heya, H. Hamada. Technology Trend of Poly-Si TFT from Viewpoints of Crystallization and Device Performance (Invited). ECS Transactions. 2018. 86. 11. 29-39
Naoto Matsuo, Akira Heya. Analytical Study for Electric Resistance of Graphene. IEICE Transactions on Electronics. 2018. 101. 7. 287-289
MOS Devices for Low-Voltage and Low-Energy Applications
Wiley-IEEE 2016
低温ポリシリコン薄膜トランジスタの開発ーシステムオンパネルをめざしてー
シーエムシー出版 2007
半導体デバイス-動作原理に基づいて
コロナ社 2000 ISBN:4339007269
Lectures and oral presentations (4)：
Technology Trend of Poly-Si TFT from Viewpoints of Crystallization and Device Performance (Invited)
(2018)
Poly-Si TFT Technology from Viewpoints of Low-Temperature Crystallization and High-Performance Device (Invited)
(2018)
Low Temperature Crystal Growth of Group IV Thin Film on Insulator and High-Performance TFT (Invited)
(IEICE Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices 2018)
Novel DNA/Si-MOSFET and Its Application (Invited)
(JSAP Intern. Conf. Simulation of Semiconductor Processes and Devices(SISPAD), Workshop of Technologies for Sensor Devices 2017)
Education (2)：
1978 - 1980 京都大学大学院工学研究科修士課程 金属加工学専攻
1974 - 1978 Kyoto University Faculty of Engineering
Professional career (1)：
博士(工学) (京都大学)
Work history (4)：
2003/10 - 現在 姫路工業大学教授,兵庫県立大学教授
1994/02 - 2003/09 Yamaguchi University Faculty of Engineering, Department of Electrical and Electronic Engineering
1992/10 - 1994/01 京都大学研究員 電子物性部門
1980/04 - 1992/09 松下電器産業(株)中央研究所,半導体研究センター
Committee career (1)：
2014/04 - 2016/03 公社 日本金属学会 第3分科(情報電子材料)委員長
Awards (4)：
2014/09 - 公益社団法人日本金属学会 学術貢献賞
2013/05 - 大阪大学 接合科学共同利用・共同研究賞
2011/01 - IEEE関西支部 IEEE関西支部メダル
2010/05 - IEEE Senior Member
Association Membership(s) (4)：
IEEE(Institute of Electrical and Electronics Engineers)
, THE INSTITUTE OF ELECTRONICS, INFORMATION AND COMMUNICATION ENGINEERS
, THE JAPAN INSTITUTE OF METALS AND MATERIALS
, THE JAPAN SOCIETY OF APPLIED PHYSICS
