Rchr
J-GLOBAL ID:201801004618075013
Update date: Sep. 11, 2024
Nishiguchi Katsuhiko
ニシグチ カツヒコ | Nishiguchi Katsuhiko
Affiliation and department:
Job title:
Group Leader, Distinguished Researcher
Homepage URL (1):
http://www.brl.ntt.co.jp/people/knishi50/index.html
Research field (3):
Electronic devices and equipment
, Semiconductors, optical and atomic physics
, Applied materials
Research keywords (3):
Sensor
, Transistor
, nano-electronics
Research theme for competitive and other funds (6):
Papers (125):
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Katsuhiko Nishiguchi, Gento Yamahata. Sub-Femtoampere-Current Detection Using Single-Electron Sensor Operated Around 295 K. IEEE Electron Device Letters. 2024. 45. 7. 1373-1376
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J. Noborisaka, T. Hayashi, A. Fujiwara, K. Nishiguchi. Valley splitting by extended zone effective mass approximation incorporating strain in silicon. Journal Applied Physics. 2024. 135. 20. 204302
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Ignacio Madrid, Zhiyong Zheng, Cedric Gerbelot, Akira Fujiwara, Shuo Li, Simon Grall, Katsuhiko Nishiguchi, Soo Hyeon Kim, Arnaud Chovin, Christophe Demaille, et al. Ballistic Brownian Motion of Nanoconfined DNA. ACS Nano. 2023. 17. 17. 17031-17040
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Shuo Li, Yannick Coffinier, Chann Lagadec, Fabrizio Cleri, Katsuhiko Nishiguchi, Akira Fujiwara, Soo Hyeon Kim, Nicolas Clément. Single-Cell Electrochemical Aptasensor Array. ACS Sensors. 2023. 8. 8. 2921-2926
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Kensaku Chida, Akira Fujiwara, Katsuhiko Nishiguchi. Noise-to-energy conversion in a nanometer-scale dot observed with electron counting statistics. Applied Physics Letters. 2023. 122. 213502-1-213502-5
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MISC (34):
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M. Jo, T. Uchida, A. Tsurumaki-Fukuchi, M. Arita, A. Fujiwara, Y. Ono, K. Nishiguchi, H. Inokawa, Y. Takahashi. Fabrication of triple-dot single-electron transistor and its turnstile operation. Proceedings of the 29th International Microprocesses and Nanotechnology Conference. 2016
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NOBORISAKA Jinichiro, NISHIGUCHI Katsuhiko, KAGESHIMA Hiroyuki, FUJIWARA Akira. Light emission from Silicon quantum-well by tunneling current injection. IEICE technical report. Electron devices. 2012. 111. 425. 41-46
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NISHIGUCHI Katsuhiko, FUJIWARA Akira. Stochastic resonance using a steep-subthreshold-swing transistor. IEICE technical report. Electron devices. 2012. 111. 425. 71-76
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西口克彦. シリコン?ナノワイヤ?トランジスタ確率共鳴素子による高速センサ. 第59回応用物理学関係速合講演会講演予稿?,2012. 2012. 6
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NISHIGUCHI Katsuhiko, FUJIWARA Akira. Stochastic resonance using single electons. IEICE technical report. 2011. 110. 423. 73-77
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Lectures and oral presentations (27):
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Electron Thermometry using Subthreshold Swing of Si Nano Transistors
(37th International Microprocesses and Nanotechnology Conference (MNC2024) 2024)
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AC-signal sensing beyond cutoff frequency using a DRAM
(37th International Microprocesses and Nanotechnology Conference (MNC2024) 2024)
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Ferromagntic manganese silicide nanoparticles formed by ion implantation in silicon
(The 85th JSAP Autumn Meeting 2024 2024)
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Energy Efficiency Limits of DRAM Cells: High-Precision Measurement Using Single-Electron Counting
(The 85th JSAP Autumn Meeting 2024 2024)
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Cross-correlation measurement of single-electron thermal motion in capacitively-coupled nanometer-scale dots
(The 85th JSAP Autumn Meeting 2024 2024)
more...
Education (2):
- 2000 - 2002 Tokyo Institute of Technology Graduate School of Science and Engineering Department of Physical Electronics
- 1998 - 2000 Tokyo Institute of Technology Graduate School of Science and Engineering Department of Physical Electronics
Professional career (1):
- Doctor of engineering (Tokyo Institute of Technology)
Work history (6):
- 2020/04 - 現在 NTT Basic Research Laboratories Nanodevices Research Group
- 2024/04 - 2024/09 Tokyo Institute of Technology Part-Time Lecturer
- 2015/10 - 2016/03 Tokyo Institute of Technology Department of Materials Science and Engineering, Interdiscriplinary Graduate School of Science and Engineering Visiting Associate Professor
- 2012/08 - 2013/08 Delft University of Technology Visiting Researcher
- 2008/06 - 2008/06 Centre national de la recherche scientifique, CNRS Visiting Researcher
- 2002/04 - NTT Basic Research Laboratories Silicon Nanodevices Research Group, Device Physics Research Laboratory Researcher
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Committee career (8):
- 2023 - 現在 MNC International Microprocesses and Nanotechnology (MNC) Organizing Committee Vice Chair
- 2021 - 現在 Silicon Nanoelectronics Workshop Program Committee
- 2022 - 2022 MNC International Microprocesses and Nanotechnology (MNC) Steering Committee Chair
- 2019 - 2021 MNC International Microprocesses and Nanotechnology (MNC) Program chair
- 2018 - 2019 MNC International Microprocesses and Nanotechnology Conference (MNC) Program vice chair
- 2014 - 2016 MNC International Microprocesses and Nanotechnology Conference (MNC) Program vice chair
- 2008 - 2014 MNC International Microprocesses and Nanotechnology Conference (MNC) Program committee member
- 2009 - 2011 SSDM International Conference on Solid State Devices and Materials (SSDM) Program committee member
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Awards (6):
- 2023/11 - 36th International Microprocesses and Nanotechnology Conference (MNC 2023) Most Impressive Presentation Award Room-temperature single-electron sensor for AC signals beyond an RC time constant
- 2013 - the Minister of Education, Culture, Sports, Science and Technology, The Young Scientists’ Prize, the Commendation for Science and Technology by the Minister of Education, Culture, Sports, Science and Technology of Japan
- 2013 - JSAP JSAP Outstanding paper award 2013 Single-Electron Stochastic Resonance Using Si Nanowire Transistors”
- 2000 - JSAP 2000 Young Scientist Award, Japan Society of Applied Physics (JSAP) 2000 Spring Meeting Ballistic transport under magnetic field in silicon vertical transistors
- 2000 - MRS Graduate Student Award Silver, Materials Research Society 2000 Fall Meeting Fabrication and Characterization of Cold Electron Emitter based on Nanocrystalline Silicon Quantum Dots
- 2000 - IUPAP IUPAP Young Author Best Paper Award, International Conference on Physics of Semiconductors Ballistic transport under magnetic field in silicon vertical transistors
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Association Membership(s) (2):
IEEE
, THE JAPAN SOCIETY OF APPLIED PHYSICS
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