Rchr
J-GLOBAL ID:201801017071635510   Update date: Apr. 28, 2021

Sugie Ryuichi

スギエ リュウイチ | Sugie Ryuichi
Affiliation and department:
Research field  (3): Electronic devices and equipment ,  Electric/electronic material engineering ,  Crystal engineering
Papers (61):
  • Yosuke Nagasawa, Akira Hirano, Masamichi Ippommatsu, Hideki Sako, Ai Hashimoto, Ryuichi Sugie, Yoshio Honda, Hiroshi Amano, Isamu Akasaki, Kazunobu Kojima, et al. Discrete AlN mole fraction of n/12 (n = 4-8) in Ga-rich zones functioning as electron pathways created in nonflat AlGaN layers grown on high-miscut sapphire substrates. Journal of Applied Physics. 2021
  • Yosuke Nagasawa, Akira Hirano, Masamichi Ippommatsu, Hideki Sako, Ai Hashimoto, Ryuichi Sugie, Yoshio Honda, Hiroshi Amano, Isamu Akasaki, Kazunobu Kojima, et al. Detailed analysis of Ga-rich current pathways created in an n-Al0.7Ga0.3N layer grown on an AlN template with dense macrosteps. APPLIED PHYSICS EXPRESS. 2020. 13. 12
  • Ryuichi Sugie, Tomoyuki Uchida, Ai Hashimoto, Seishi Akahori, Koji Matsumura, Yoshiharu Tanii. Low-energy cross-sectional cathodoluminescence analysis of the depth distribution of point defects in Si-ion-implanted beta-Ga2O3. APPLIED PHYSICS EXPRESS. 2020. 13. 12
  • Kotaro Ishiji, Kiichi Sato, Takashi Fujii, Tsutomu Araki, Shinichiro Mouri, Ryuichi Sugie. Correlation between crystal warpage and swelling of 4H-SiC through implantation and annealing. SEMICONDUCTOR SCIENCE AND TECHNOLOGY. 2020. 35. 10
  • Ryuichi Sugie, Tomoyuki Uchida, Koji Matsumura, Hideki Sako. Using Cross-Sectional Cathodoluminescence to Visualize Process-Induced Defects in GaN-Based High Electron Mobility Transistors. JOURNAL OF ELECTRONIC MATERIALS. 2020. 49. 9. 5085-5090
more...
MISC (71):
  • 内田智之, 杉江隆一. ラマン分光法を用いたGaN HEMTのはんだ接合応力の評価. Symposium on Microjoining and Assembly Technology in Electronics. 2020. 26th
  • 佐藤希一, 藤井高志, 藤井高志, 荒木努, 毛利真一郎, 石地耕太朗, 岩本敏志, 杉江隆一. Non-destructive Measurement of Electrical Properties of Ion Implanted 4H-SiC Wafer with 3 Layers. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2020. 67th
  • 藤井高志, 藤井高志, 白石裕児, 南都十輝, 福田承生, 家地洋之, 遠藤亮, 杉江隆一. Characterization of ScAlMgO4 crystal to grow GaN epitaxal film. 応用物理学会春季学術講演会講演予稿集(CD-ROM). 2020. 67th
  • 栢本聖也, 藤井高志, 藤井高志, 福田承生, 杉江隆一, 毛利真一郎, 荒木努. Growth of GaN Film on ScAlMgO4 Substrate by RF-MBE: II. 応用物理学会秋季学術講演会講演予稿集(CD-ROM). 2020. 81st
  • 小島一信, 長澤陽祐, 平野光, 一本松正道, 杉江隆一, 本田善央, 天野浩, 天野浩, 天野浩, 赤崎勇, et al. Characterization of AlGaN multiple-quantum-wells grown on c-plane AlN/sapphire templates with macro-steps. 日本結晶成長学会誌(CD-ROM). 2020. 47. 3. 1-8
more...
Patents (11):
Books (1):
  • LSIテスティングハンドブック
    オーム社 2008 ISBN:9784274206320
Professional career (1):
  • 博士(工学) (大阪大学)
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