Toshiyuki Sameshima

Affiliation and department：
Job title： Professor
Other affiliations (2)：

Tokyo University of Agriculture and Technology Faculty of Engineering, Department of Electrical and Electronic Engineering
Tokyo University of Agriculture and Technology Graduate School of Engineering, Department of Electrical and Electronic Engineering

Homepage URL (1)： http://www.tuat.ac.jp/~sameken/

Research field (1)： Electric/electronic material engineering

Research theme for competitive and other funds (61)：

Show all

Papers (198)：

ｍore...

MISC (3)：

宮崎智由, 宮崎智由, 鮫島俊之, 齋藤宗平, 小野寺航, 上原琢磨, 有馬卓司, 蓮見真彦, 小林剛, 芹澤和泉, et al. Activation of Phosphorus Implanted Silicon Substrate with a Diameter of 300 mm by a Heating System using a Wireless Lamp as the Heat Source. 電子情報通信学会論文誌 C(Web). 2023. J106-C. 1
Experimental Study on EL Device in Visible/IR Regions Using Two-Dimensional SiGe and SiC Layers. 2017. 28. 1. 31-36
H Watakabe, T Sameshima, H Kanno, T Sadoh, M Miyao. Electrical and structural properties of poly-SiGe film formed by pulsed-laser annealing. JOURNAL OF APPLIED PHYSICS. 2004. 95. 11. 6457-6461

Books (5)：

薄膜トランジスタ
コロナ社 2008
Low-Temperature Poly-Silicon Thin Film Transistor for System on Panel
シーエムシー出版 2007 ISBN:9784882316787
レーザーハンドブック
オーム社 2005 ISBN:4274200353
THIN FILM TRANSISTORS
Kluwer Academic Publishers 2003 ISBN:1402075065
レーザー研究第31巻第1号
(社)レーザー学会 2003

Lectures and oral presentations (450)：

Heating equipment with carbon heating used to activate silicon and fabricate its solar cells
(第79回応用物理学会学術講演会 2018)
Two-Step Ion Implantation used for Activating Boron Atoms in Silicon at 300°C
(22nd International Conference on Ion Implantation Technology 2018)
Carbon Heating Tube Used for Rapid Heating System for Semiconductor Annealing
(Active Matrix Flat Panel Displays 2018)
Two-Step Ion Implantation used for Activating Boron Atoms in Silicon at 300°C
(Active Matrix Flat Panel Displays 2018)
Surface Passivation of Crystalline Silicon by Heat Treatment in Liquid Water and Its Application to Improve the Interface Properties of Metal-Oxide-Semiconductor Structures
(Active Matrix Flat Panel Displays 2018)

ｍore...

Works (19)：

ｍore...

Education (2)：

Professional career (2)：

Work history (6)：

Show all

Awards (1)：

Association Membership(s) (2)：

日本物理学会 , 応用物理学会

※ Researcher’s information displayed in J-GLOBAL is based on the information registered in researchmap. For details, see here.

Return to Previous Page