Art

J-GLOBAL ID：201802227534197678   Reference number：18A1860054

Bias voltage criteria of gate shielding effect for protecting IGBTs from shoot-through phenomena

シュートスルー現象からIGBTを保護するためのゲート遮蔽効果のバイアス電圧基準【JST・京大機械翻訳】

Author (6)： Tsukuda M. (Advanced Power Devices Laboratory, Green Electronics Research Institute, Kitakyushu, Japan) ,  Tsukuda M. (Next Generation Power Electronics Research Center, Kyushu Institute of Technology, Kitakyushu, Japan) ,  Abe S. (Next Generation Power Electronics Research Center, Kyushu Institute of Technology, Kitakyushu, Japan) ,  Hasegawa K. (Next Generation Power Electronics Research Center, Kyushu Institute of Technology, Kitakyushu, Japan) ,  Ninomiya T. (Advanced Power Devices Laboratory, Green Electronics Research Institute, Kitakyushu, Japan) ,  Omura I. (Next Generation Power Electronics Research Center, Kyushu Institute of Technology, Kitakyushu, Japan)
Material： Microelectronics Reliability  (Microelectronics and Reliability)
Volume： 88-90  Page： 482-485  Publication year： 2018 
JST Material Number： C0530A  ISSN： 0026-2714  Document type： Article
Article type： 原著論文  Country of issue： United Kingdom (GBR)  Language： ENGLISH (EN)

Abstract/Point： In this paper, we propose the ...

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Thesaurus term： *voltage ,  *IGBT ,  stray capacity ,  *bias ,  Safety ,  noise (signal)
Semi thesaurus term： ゲート電圧 ,  *バイアス電圧 ,  遮蔽効果 , 【Automatic Indexing@JST】

Author keywords (5)： Bias voltage ,  Gate ,  Shielding effect ,  IGBT ,  Shoot-through

JST classification (2)： Transistors  (NC03070N) ,  Measurement,testing and reliability of solid-state devices  (NC03040G)

Terms in the title (6)： シュート ,  現象 ,  IGBT ,  ゲート ,  遮蔽効果 ,  バイアス電圧