Art
J-GLOBAL ID：201802249794231848   Reference number：18A0910934

A transient simulation approach to obtaining capacitance-voltage characteristics of GaN MOS capacitors with deep-level traps

深準位トラップを持つGaN MOSキャパシタの容量-電圧特性を得るための過渡シミュレーション法
Author (5)：
FUKUDA Koichi

About FUKUDA Koichi

(National Inst. of Advance Industrial Sci. and Technol., Ibaraki, JPN)

About National Inst. of Advance Industrial Sci. and Technol., Ibaraki, JPN

, 
ASAI Hidehiro

About ASAI Hidehiro

(National Inst. of Advance Industrial Sci. and Technol., Ibaraki, JPN)

About National Inst. of Advance Industrial Sci. and Technol., Ibaraki, JPN

, 
HATTORI Junichi

About HATTORI Junichi

(National Inst. of Advance Industrial Sci. and Technol., Ibaraki, JPN)

About National Inst. of Advance Industrial Sci. and Technol., Ibaraki, JPN

, 
SHIMIZU Mitsuaki

About SHIMIZU Mitsuaki

(National Inst. of Advance Industrial Sci. and Technol., Ibaraki, JPN)

About National Inst. of Advance Industrial Sci. and Technol., Ibaraki, JPN

, 
HASHIZUME Tamotsu

About HASHIZUME Tamotsu

(Hokkaido Univ., Sapporo, JPN)

About Hokkaido Univ., Sapporo, JPN


Material：
Japanese Journal of Applied Physics  (JJAP)

About Japanese Journal of Applied Physics


Volume： 57  Issue： 4S  Page： 04FG04.1-04FG04.5  Publication year： Apr. 2018 
JST Material Number： G0520B  ISSN： 0021-4922  CODEN： JJAPB6  Document type： Article
Article type： 原著論文  Country of issue： United Kingdom (GBR)  Language： ENGLISH (EN)
Thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
deep level

About deep level

, 
*gallium nitride

About gallium nitride

, 
compound semiconductor

About compound semiconductor

, 
*thin film condenser

About thin film condenser

, 
*capacitance-voltage characteristic

About capacitance-voltage characteristic

, 
transient analysis

About transient analysis

, 
energy level

About energy level

, 
trap level

About trap level

, 
analysis

About analysis


Semi thesaurus term：
Thesaurus term/Semi thesaurus term
Keywords indexed to the article.
All keywords is available on JDreamIII(charged).
On J-GLOBAL, this item will be available after more than half a year after the record posted. In addtion, medical articles require to login to MyJ-GLOBAL.
*MOS capacitor

About MOS capacitor

, 
Transient simulation

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, 
deep level

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JST classification (1)：
JST classification
Category name(code) classified by JST.
LCR parts 
(NA05030D)

About LCR parts

Terms in the title (6)：
Terms in the title
Keywords automatically extracted from the title.
深準位

About 深準位

, 
トラップ

About トラップ

, 
GaN

About GaN

, 
MOSキャパシタ

About MOSキャパシタ

, 
電圧特性

About 電圧特性

, 
シミュレーション法

About シミュレーション法


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