Art
J-GLOBAL ID:201802253978360873   Reference number:18A1236910

Modulation transfer function analysis of silicon X-ray sensor with trench-structured photodiodes

トレンチ構造フォトダイオードを用いたシリコンX線センサの変調伝達関数解析
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Material:
Volume: 15  Issue: 11  Page: 20180177(J-STAGE)  Publication year: 2018 
JST Material Number: U0039A  ISSN: 1349-2543  Document type: Article
Article type: 短報  Country of issue: Japan (JPN)  Language: ENGLISH (EN)
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All keywords is available on JDreamIII(charged).
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Photodetectors  ,  Semiconductor integrated circuit 
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